La{sub 2}Hf{sub 2}O{sub 7} high-{kappa} gate dielectric grown directly on Si(001) by molecular-beam epitaxy
- MBE Laboratory, Institute of Materials Science, National Center for Scientific Research 'DEMOKRITOS', Athens (Greece)
We show that at deposition temperature in the 750-770 deg. C range, the La{sub 2}Hf{sub 2}O{sub 7} (LHO) compound can be grown crystalline on Si(001). The predominant orientation is (001){sub LHO}//(001){sub Si} and [110]{sub LHO}//[110]{sub Si} and results in ultimately clean interfaces, indicating a strong tendency for cube-on-cube epitaxy. The ordered pyrochlore and random fluorite phases coexist in the dielectric. Acceptable gate leakage current, negligible hysteresis and high dielectric permittivity {kappa}{approx}23 were obtained from electrical characterization of metal-insulator-semiconductor capacitors. The quality of interfaces and the good electrical characteristics make crystalline LHO a promising high-{kappa} candidate for the replacement of SiO{sub 2} in the gate of future aggressively scaled transistors.
- OSTI ID:
- 20634359
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 15; Other Information: DOI: 10.1063/1.1806556; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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