Ferromagnetism and coupling between charge carriers and magnetization at room temperature in Ge/MnAs multilayers

Journal Article · Mon Oct 11 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1801173· OSTI ID:20634356

Lee, J J; Cui, Y; Song, J H; Freeman, A J; Ketterson, J B; Cho, S L ^[1]

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1. Department of Physics and Astronomy and Department of Electrical and Computer Engineering, Northwestern University, Evanston, Illinois 60208 (United States)

Ge/MnAs multilayers are grown on (001) GaAs substrates by molecular-beam epitaxy. All samples investigated showed strong anomalous Hall effects at room temperature with p-type conductivity and temperature-dependent hysteresis loops in the magnetization. Ge/MnAs multilayers also revealed an in-plane magnetic easy axis and a vanishingly small in-plane magnetic anisotropy. These results are in sharp contrast to MnAs/GaAs digital alloys, where the reported Curie temperatures are at or below 50 K, and demonstrate the potential of germanium-based spintronic devices.

• OSTI ID: 20634356
• Journal Information: Applied Physics Letters, Vol. 85, Issue 15; Other Information: DOI: 10.1063/1.1801173; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ANISOTROPY
CHARGE CARRIERS
CURIE POINT
ELECTRIC CONDUCTIVITY
FERROMAGNETIC MATERIALS
FERROMAGNETISM
GALLIUM ARSENIDES
GERMANIUM
HALL EFFECT
HYSTERESIS
LAYERS
MAGNETIC SEMICONDUCTORS
MAGNETIZATION
MANGANESE ARSENIDES
MOLECULAR BEAM EPITAXY
SUBSTRATES
TEMPERATURE DEPENDENCE
TEMPERATURE RANGE 0273-0400 K