Mechanism of apatite formation on hydrogen plasma-implanted single-crystal silicon
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
Hydrogen is implanted into single-crystal silicon wafers using plasma ion immersion implantation to improve the surface bioactivity and the mechanism of apatite formation is investigated. Our micro-Raman and transmission electron microscopy results reveal the presence of a disordered silicon surface containing Si-H bonds after hydrogen implantation. When the sample is immersed in a simulated body fluid, the Si-H bonds on the silicon wafer initially react with water to produce a negatively charged surface containing the functional group ({identical_to}Si-O{sup -}) that subsequently induces the formation of apatite. A good understanding of the formation mechanism of apatite on hydrogen implanted silicon is not only important from the viewpoint of biophysics but also vital to the actual use of silicon-based microchips and MEMS inside a human body.
- OSTI ID:
- 20634340
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 16; Other Information: DOI: 10.1063/1.1807009; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
Similar Records
Thermal stability of diamondlike carbon buried layer fabricated by plasma immersion ion implantation and deposition in silicon on insulator
Damage in hydrogen plasma implanted silicon