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Title: Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates

Abstract

Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films were epitaxially grown on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy. [001] oriented MgO substrates with 2 deg. and 5 deg. miscut toward [010] were selected. The nucleation of antiphase domain boundaries in the direction parallel to the step edges is greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. The reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes are parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.

Authors:
; ; ;  [1]
  1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)
Publication Date:
OSTI Identifier:
20634321
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 14; Other Information: DOI: 10.1063/1.1804609; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; BARIUM COMPOUNDS; DIELECTRIC MATERIALS; ELECTRODES; ENERGY BEAM DEPOSITION; LASER RADIATION; MAGNESIUM OXIDES; MOLECULAR BEAM EPITAXY; PERMITTIVITY; PULSED IRRADIATION; STRONTIUM TITANATES; SUBSTRATES; THIN FILMS

Citation Formats

Zheng, H, Salamanca-Riba, L, Ramesh, R, Li, H, and Motorola Labs, Advanced Materials Research, Physical Sciences Research Laboratories, 7700 S. River Parkway, Tempe, Arizona 85284. Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates. United States: N. p., 2004. Web. doi:10.1063/1.1804609.
Zheng, H, Salamanca-Riba, L, Ramesh, R, Li, H, & Motorola Labs, Advanced Materials Research, Physical Sciences Research Laboratories, 7700 S. River Parkway, Tempe, Arizona 85284. Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates. United States. doi:10.1063/1.1804609.
Zheng, H, Salamanca-Riba, L, Ramesh, R, Li, H, and Motorola Labs, Advanced Materials Research, Physical Sciences Research Laboratories, 7700 S. River Parkway, Tempe, Arizona 85284. Mon . "Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates". United States. doi:10.1063/1.1804609.
@article{osti_20634321,
title = {Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates},
author = {Zheng, H and Salamanca-Riba, L and Ramesh, R and Li, H and Motorola Labs, Advanced Materials Research, Physical Sciences Research Laboratories, 7700 S. River Parkway, Tempe, Arizona 85284},
abstractNote = {Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films were epitaxially grown on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy. [001] oriented MgO substrates with 2 deg. and 5 deg. miscut toward [010] were selected. The nucleation of antiphase domain boundaries in the direction parallel to the step edges is greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. The reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes are parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.},
doi = {10.1063/1.1804609},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 14,
volume = 85,
place = {United States},
year = {2004},
month = {10}
}