Suppression of antiphase domain boundary formation in Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} films grown on vicinal MgO substrates

Journal Article · Mon Oct 04 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1804609· OSTI ID:20634321

Zheng, H; Salamanca-Riba, L; Ramesh, R; Li, H ^[1]

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1. Department of Materials Science and Engineering, University of Maryland, College Park, Maryland 20742 (United States)

Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films were epitaxially grown on MgO vicinal substrates by pulsed-laser deposition and molecular-beam epitaxy. [001] oriented MgO substrates with 2 deg. and 5 deg. miscut toward [010] were selected. The nucleation of antiphase domain boundaries in the direction parallel to the step edges is greatly reduced in BST films grown on the vicinal substrates compared to the films grown on flat substrates. The reduction in antiphase domain boundaries gives rise to a higher dielectric constant when the electrodes are parallel to the direction of the steps, by about 280-460, than in the perpendicular direction.

• OSTI ID: 20634321
• Journal Information: Applied Physics Letters, Vol. 85, Issue 14; Other Information: DOI: 10.1063/1.1804609; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
BARIUM COMPOUNDS
DIELECTRIC MATERIALS
ELECTRODES
ENERGY BEAM DEPOSITION
LASER RADIATION
MAGNESIUM OXIDES
MOLECULAR BEAM EPITAXY
PERMITTIVITY
PULSED IRRADIATION
STRONTIUM TITANATES
SUBSTRATES
THIN FILMS