Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon
- Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
We propose to replace the buried SiO{sub 2} layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation and deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900 deg. C. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding.
- OSTI ID:
- 20634295
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 13; Other Information: DOI: 10.1063/1.1799242; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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