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Title: Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon

Abstract

We propose to replace the buried SiO{sub 2} layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation and deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900 deg. C. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding.

Authors:
; ; ; ; ;  [1];  [2];  [2]
  1. Department of Physics and Materials Science, City University of Hong Kong, Tat Chee Avenue, Kowloon, Hong Kong (China)
  2. (China)
Publication Date:
OSTI Identifier:
20634295
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 85; Journal Issue: 13; Other Information: DOI: 10.1063/1.1799242; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ANNEALING; BONDING; DEPOSITION; DIAMONDS; GRAPHITIZATION; HEATING; HYDROGEN; ION IMPLANTATION; LAYERS; MONOCRYSTALS; PLASMA; SEMICONDUCTOR MATERIALS; SILICON; SILICON OXIDES; SURFACES; THIN FILMS; TOPOGRAPHY; TRANSMISSION ELECTRON MICROSCOPY

Citation Formats

Zhu Ming, Chu, Paul K, Shi Xuejie, Wong Man, Liu Weili, Lin Chenglu, Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, and Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai. Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon. United States: N. p., 2004. Web. doi:10.1063/1.1799242.
Zhu Ming, Chu, Paul K, Shi Xuejie, Wong Man, Liu Weili, Lin Chenglu, Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, & Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai. Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon. United States. doi:10.1063/1.1799242.
Zhu Ming, Chu, Paul K, Shi Xuejie, Wong Man, Liu Weili, Lin Chenglu, Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong, and Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai. Mon . "Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon". United States. doi:10.1063/1.1799242.
@article{osti_20634295,
title = {Formation of silicon-on-diamond by direct bonding of plasma-synthesized diamond-like carbon to silicon},
author = {Zhu Ming and Chu, Paul K and Shi Xuejie and Wong Man and Liu Weili and Lin Chenglu and Department of Electrical and Electronic Engineering, The Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong and Research Center of Functional Semiconductor Film Engineering and Technology, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, 865 Changning Road, 200050 Shanghai},
abstractNote = {We propose to replace the buried SiO{sub 2} layer in silicon-on-insulator with a plasma synthesized diamond-like-carbon (DLC) thin film to mitigate the self-heating effects. The DLC films synthesized on silicon by a plasma immersion ion implantation and deposition process exhibit outstanding surface topography, and excellent insulating properties are maintained up to an annealing temperature of 900 deg. C. Hence, the degree of graphitization in our DLC materials is insignificant during thin-film transistor processing and even in most annealing steps in conventional complementary metal oxide silicon processing. Using Si/DLC direct bonding and the hydrogen-induced layer transfer method, a silicon-on-diamond structure has been fabricated. Cross-sectional high-resolution transmission electron microscopy reveals that the bonded interface is abrupt and the top Si layer exhibits nearly perfect single crystalline quality. A model is postulated to describe the reactions occurring at the interface during the annealing steps in Si-DLC wafer bonding.},
doi = {10.1063/1.1799242},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 13,
volume = 85,
place = {United States},
year = {2004},
month = {9}
}