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Title: Optical thin film deposition with O2 cluster ion beam assisted deposition

Abstract

O2 gas cluster ion beam (O2-GCIB) assisted depositions were studied to form high quality Ta2O5, Nb2O5 and SiO2 films. The optimum irradiation conditions for Ta2O5 and Nb2O5 film depositions were the acceleration energy of 5 to 9keV and the cluster ion current density over 0.5{mu}A/cm2, respectively. The Nb2O5/SiO2 films deposited with O2-GCIB irradiations showed very uniform and dense structures without columnar or porous structures. Due to the significant surface smoothing effect of GCIB, the interface and top surface of Nb2O5/SiO2 multi-layer were quite flat. The interference filter deposited with O2-GCIB assist deposition was very stable and there was no shift of wavelength before and after environmental tests. As O2-GCIB is equivalently very low-energy ion beam and is able to deposit flat and dense amorphous films at low substrate temperature, it is suited to deposit multi-layered films where low-energy assisting ions are required.

Authors:
;  [1]
  1. Laboratory of Advanced Science and Technology for Industry, Himeji Institute of Technology (Japan)
Publication Date:
OSTI Identifier:
20634204
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 680; Journal Issue: 1; Conference: 17. international conference on the application of accelerators in research and industry, Denton, TX (United States), 12-16 Nov 2002; Other Information: DOI: 10.1063/1.1619813; (c) 2003 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; CLUSTER BEAMS; CURRENT DENSITY; INTERFERENCE; ION BEAMS; MOLECULAR CLUSTERS; OXYGEN; POROUS MATERIALS; THIN FILMS; WAVELENGTHS

Citation Formats

Toyoda, Noriaki, and Yamada, Isao. Optical thin film deposition with O2 cluster ion beam assisted deposition. United States: N. p., 2003. Web. doi:10.1063/1.1619813.
Toyoda, Noriaki, & Yamada, Isao. Optical thin film deposition with O2 cluster ion beam assisted deposition. United States. https://doi.org/10.1063/1.1619813
Toyoda, Noriaki, and Yamada, Isao. 2003. "Optical thin film deposition with O2 cluster ion beam assisted deposition". United States. https://doi.org/10.1063/1.1619813.
@article{osti_20634204,
title = {Optical thin film deposition with O2 cluster ion beam assisted deposition},
author = {Toyoda, Noriaki and Yamada, Isao},
abstractNote = {O2 gas cluster ion beam (O2-GCIB) assisted depositions were studied to form high quality Ta2O5, Nb2O5 and SiO2 films. The optimum irradiation conditions for Ta2O5 and Nb2O5 film depositions were the acceleration energy of 5 to 9keV and the cluster ion current density over 0.5{mu}A/cm2, respectively. The Nb2O5/SiO2 films deposited with O2-GCIB irradiations showed very uniform and dense structures without columnar or porous structures. Due to the significant surface smoothing effect of GCIB, the interface and top surface of Nb2O5/SiO2 multi-layer were quite flat. The interference filter deposited with O2-GCIB assist deposition was very stable and there was no shift of wavelength before and after environmental tests. As O2-GCIB is equivalently very low-energy ion beam and is able to deposit flat and dense amorphous films at low substrate temperature, it is suited to deposit multi-layered films where low-energy assisting ions are required.},
doi = {10.1063/1.1619813},
url = {https://www.osti.gov/biblio/20634204}, journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 680,
place = {United States},
year = {Tue Aug 26 00:00:00 EDT 2003},
month = {Tue Aug 26 00:00:00 EDT 2003}
}