Crack-free and conductive Si-doped AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001)

Journal Article · Mon Sep 13 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1791738· OSTI ID:20632848

Ive, Tommy; Brandt, Oliver; Kostial, Helmar; Hesjedal, Thorsten; Ramsteiner, Manfred; Ploog, Klaus H ^[1]

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1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, D-10117 Berlin (Germany)

We demonstrate Si-doped n-type AlN/GaN distributed Bragg reflectors grown on 6H-SiC(0001). The structures are crack-free and have a stopband centered around 450 nm with a full width at half maximum between 40 and 50 nm. The maximum measured reflectance is {>=}99%. A comparison between Si-doped and undoped structures reveals no degradation of the reflectance due to the Si doping. Vertical conductance measurements at room temperature on the samples show an ohmic I-V behavior in the entire measurement range. The measured resistivity at 77 K is only a factor of 2 larger than the resistivity measured at room temperature.

• OSTI ID: 20632848
• Journal Information: Applied Physics Letters, Vol. 85, Issue 11; Other Information: DOI: 10.1063/1.1791738; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ALUMINIUM NITRIDES
COMPARATIVE EVALUATIONS
DOPED MATERIALS
ELECTRIC CONDUCTIVITY
GALLIUM NITRIDES
MOLECULAR BEAM EPITAXY
MORPHOLOGY
RAMAN SPECTRA
REFLECTIVITY
SEMICONDUCTOR MATERIALS
SILICON
SILICON CARBIDES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS