Nanoscale modification of electrical and magnetic properties of Fe{sub 3}O{sub 4} thin film by atomic force microscopy lithography

Journal Article · Mon Sep 06 00:00:00 EDT 2004 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.1784884· OSTI ID:20632780

Hirooka, Motoyuki; Tanaka, Hidekazu; Li, Runwei; Kawai, Tomoji ^[1]

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1. Institute of Scientific and Industrial Research, Osaka University, 8-1 Mihogaoka, Ibaraki, Osaka 567-0047 (Japan)

We present a report on the nanopatterning of an epitaxial ultrathin film of Fe{sub 3}O{sub 4} with room-temperature (ferri)magnetism using atomic force microscopy (AFM). Fe{sub 3}O{sub 4} thin films with atomically flat surfaces were grown using laser molecular-beam epitaxy on a MgAl{sub 2}O{sub 4}(111) single-crystal substrate. (Nanowire) were constructed on Fe{sub 3}O{sub 4} thin film by applying an electric field between an AFM conductive tip and the surface of the film. The minimum width and height in the resulting nanowire are 48 nm and 2 nm, respectively. The patterned region of the Fe{sub 3}O{sub 4} film surface possesses a resistance which is 10{sup 5} times higher than the unpatterned region. Furthermore, magnetic force microscopy measurements also revealed that magnetization of the patterned region is strongly suppressed.

• OSTI ID: 20632780
• Journal Information: Applied Physics Letters, Vol. 85, Issue 10; Other Information: DOI: 10.1063/1.1784884; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
ATOMIC FORCE MICROSCOPY
ELECTRIC FIELDS
FERROMAGNETIC MATERIALS
IRON OXIDES
LASER MATERIALS
MAGNETIC FIELDS
MAGNETIC PROPERTIES
MAGNETIZATION
MAGNETORESISTANCE
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
QUANTUM WIRES
SUBSTRATES
SURFACES
TEMPERATURE RANGE 0273-0400 K
THIN FILMS