High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers
- DPMC, University of Geneva, 24 Quai E. Ansermet, 1211 Geneva 4 (Switzerland)
Using high-quality epitaxial c-axis Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO{sub 3} substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 {mu}m wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50-3.50 GHz have been realized and tested.
- OSTI ID:
- 20632775
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 10; Other Information: DOI: 10.1063/1.1787897; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
ATOMIC FORCE MICROSCOPY
DEPOSITION
DOMAIN STRUCTURE
DOPED MATERIALS
ELECTRIC FIELDS
EPITAXY
FERROELECTRIC MATERIALS
GHZ RANGE 01-100
LEAD COMPOUNDS
MAGNETRONS
MODULATION
PERIODICITY
PIEZOELECTRICITY
POLARIZATION
SOUND WAVES
SPUTTERING
STRONTIUM TITANATES
THIN FILMS
TRANSDUCERS
ZIRCONIUM COMPOUNDS