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Title: High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers

Abstract

Using high-quality epitaxial c-axis Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO{sub 3} substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 {mu}m wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50-3.50 GHz have been realized and tested.

Authors:
; ; ; ; ; ; ;  [1];  [2];  [3];  [4]
  1. DPMC, University of Geneva, 24 Quai E. Ansermet, 1211 Geneva 4 (Switzerland)
  2. (France)
  3. (Italy)
  4. (Norway)
Publication Date:
OSTI Identifier:
20632775
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 85; Journal Issue: 10; Other Information: DOI: 10.1063/1.1787897; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; DEPOSITION; DOMAIN STRUCTURE; DOPED MATERIALS; ELECTRIC FIELDS; EPITAXY; FERROELECTRIC MATERIALS; GHZ RANGE 01-100; LEAD COMPOUNDS; MAGNETRONS; MODULATION; PERIODICITY; PIEZOELECTRICITY; POLARIZATION; SOUND WAVES; SPUTTERING; STRONTIUM TITANATES; THIN FILMS; TRANSDUCERS; ZIRCONIUM COMPOUNDS

Citation Formats

Sarin Kumar, A.K., Paruch, P., Triscone, J.-M., Daniau, W., Ballandras, S., Pellegrino, L., Marre, D., Tybell, T., Laboratoire de Physique et Metrologie des Oscillateurs, CNRS UPR3203, 32 Avenue de l'Observatoire, F25044, Besancon, INFM, Research unit of Genoa, Dodecaneso 33, 16146 Genova, and Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim. High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers. United States: N. p., 2004. Web. doi:10.1063/1.1787897.
Sarin Kumar, A.K., Paruch, P., Triscone, J.-M., Daniau, W., Ballandras, S., Pellegrino, L., Marre, D., Tybell, T., Laboratoire de Physique et Metrologie des Oscillateurs, CNRS UPR3203, 32 Avenue de l'Observatoire, F25044, Besancon, INFM, Research unit of Genoa, Dodecaneso 33, 16146 Genova, & Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim. High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers. United States. doi:10.1063/1.1787897.
Sarin Kumar, A.K., Paruch, P., Triscone, J.-M., Daniau, W., Ballandras, S., Pellegrino, L., Marre, D., Tybell, T., Laboratoire de Physique et Metrologie des Oscillateurs, CNRS UPR3203, 32 Avenue de l'Observatoire, F25044, Besancon, INFM, Research unit of Genoa, Dodecaneso 33, 16146 Genova, and Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim. 2004. "High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers". United States. doi:10.1063/1.1787897.
@article{osti_20632775,
title = {High-frequency surface acoustic wave device based on thin-film piezoelectric interdigital transducers},
author = {Sarin Kumar, A.K. and Paruch, P. and Triscone, J.-M. and Daniau, W. and Ballandras, S. and Pellegrino, L. and Marre, D. and Tybell, T. and Laboratoire de Physique et Metrologie des Oscillateurs, CNRS UPR3203, 32 Avenue de l'Observatoire, F25044, Besancon and INFM, Research unit of Genoa, Dodecaneso 33, 16146 Genova and Department of Electronics and Telecommunications, Norwegian University of Science and Technology, 7491 Trondheim},
abstractNote = {Using high-quality epitaxial c-axis Pb(Zr{sub 0.2}Ti{sub 0.8})O{sub 3} films grown by off-axis magnetron sputtering onto metallic (001) Nb-doped SrTiO{sub 3} substrates, a nonconventional thin-film surface acoustic wave device based on periodic piezoelectric transducers was realized. The piezoelectric transducers consist of a series of ferroelectric domains with alternating polarization states. The artificial modification of the ferroelectric domain structure is performed by using an atomic force microscope tip as a source of electric field, allowing local switching of the polarization. Devices with 1.2 and 0.8 {mu}m wavelength, defined by the modulation period of the polarization, and corresponding to central frequencies in the range 1.50-3.50 GHz have been realized and tested.},
doi = {10.1063/1.1787897},
journal = {Applied Physics Letters},
number = 10,
volume = 85,
place = {United States},
year = 2004,
month = 9
}
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