Proton-beam-induced defect levels in CuInSe{sub 2} thin-film absorbers: An investigation on nonradiative electron transitions
- Department of Electrical and Electronic Engineering, Miyazaki University, 1-1 Gakuen-kibanadai, Miyazaki, 889-2192 (Japan)
Electron nonradiative relaxation through the proton-irradiation-induced defects in CuInSe{sub 2} solar cell material were investigated by using a piezoelectric photothermal spectroscopy (PPTS). Among the observed three peaks at 1.01, 0.93, and 0.84 eV, it was concluded that the peak at 0.84 eV was due to the proton-irradiation-induced defect. This is because this peak appeared after irradiation with the proton energy of 0.38 MeV and the fluence of 1x10{sup 14} cm{sup -2}. The peaks at 1.01 and 0.93 eV were attributed to free band-edge exciton and intrinsic defect level, respectively. The intensities for the latter two peaks were not affected by the irradiation. Since the irradiation defect was clearly observed at room temperature, we concluded that the PPTS technique was a very sensitive tool to study the defect level in the irradiated semiconductor thin-film solar cell structures.
- OSTI ID:
- 20632740
- Journal Information:
- Applied Physics Letters, Vol. 85, Issue 8; Other Information: DOI: 10.1063/1.1784518; (c) 2004 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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