High LET Single Event Upset Cross Sections For Bulk and SOI CMOS SRAMs
- Ion Beam Materials Research Laboratory, Sandia National Laboratories, PO Box 5800, MS-1056, Albuquerque, NM 87185-1056 (United States)
Electronics in spacecraft and satellites are exposed to high-energy cosmic radiation. In addition, terrestrial radiation can also affect earth-based electronics. To study the effects of radiation upon integrated circuits and to insure the reliability of electronic devices, cosmic and terrestrial radiations are simulated with ion beams from particle accelerators. A new, higher Linear Energy Transfer (LET) acceleration system for heavy ions has been developed at Sandia National Laboratories. Heavy ions from a 6.5 MV EN tandem Van de Graaff accelerator at 0.25 MeV/amu are injected into a two-stage Radio Frequency Quadrupole (RFQ) linac, which accelerates the ions to 1.9 MeV/amu. These ions together with those from the Brookhaven National Laboratory MP Tandem have been used to measure single event upset (SEU) cross sections as a function of LET for both bulk and Silicon on Insulator (SOI) Complementary Metal Oxide Semiconductor, Static Random Access Memories. The magnitudes of these cross sections indicate that the upsets in both the SOI and bulk parts are caused by OFF-drain strikes.
- OSTI ID:
- 20632598
- Journal Information:
- AIP Conference Proceedings, Vol. 680, Issue 1; Conference: 17. international conference on the application of accelerators in research and industry, Denton, TX (United States), 12-16 Nov 2002; Other Information: DOI: 10.1063/1.1619734; (c) 2003 American Institute of Physics; Country of input: International Atomic Energy Agency (IAEA); ISSN 0094-243X
- Country of Publication:
- United States
- Language:
- English
Similar Records
Theoretical study of SEUs in 0. 25-[mu]m fully-deleted CMOS/SOI technology
SEU (single-event-upset) characterization of a hardened CMOS 64K and 256K SRAM