The effect of power supply voltage scaling on the total dose radiation response of fully-depleted SOI MOS transistors
Journal Article
·
· IEEE Transactions on Nuclear Science
- Honeywell Solid State Electronics Center, Plymouth, MN (United States)
- Naval Research Lab., Washington, DC (United States)
The radiation induced front channel threshold voltage shift ({Delta}V{sub tl}) of fully-depleted MOSFETs fabricated in SIMOX is investigated and analyzed as a function of power supply voltage (V{sub DD}) from 5.5 to 1.2 volts. This work shows that the expected improvement in front channel radiation hardness by reducing V{sub DD} is not fully realized due to (1) a radiation induced off-set voltage at V{sub DD} = 0 V, and (2) enhanced coupling of the buried oxide charge to the front channel.
- OSTI ID:
- 203739
- Report Number(s):
- CONF-950716-; ISSN 0018-9499; TRN: 96:009705
- Journal Information:
- IEEE Transactions on Nuclear Science, Vol. 42, Issue 6Pt1; Conference: 32. annual IEEE international nuclear and space radiation effects conference, Madison, WI (United States), 17-21 Jul 1995; Other Information: PBD: Dec 1995
- Country of Publication:
- United States
- Language:
- English
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