Pseudopotential calculations of electron and hole addition spectra of InAs, InP, and Si quantum dots

Journal Article · Sat Jul 15 00:00:00 EDT 2000 · Physical Review. B, Condensed Matter and Materials Physics

DOI:https://doi.org/10.1103/PhysRevB.62.2614· OSTI ID:20217212

Franceschetti, Alberto ^[1]; Zunger, Alex ^[1]

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1. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)

The electron and hole addition energies, the quasiparticle gap, and the optical gap of InAs, InP, and Si quantum dots are calculated using microscopic pseudopotential wave functions. The effects of the dielectric mismatch between the quantum dot and the surrounding material are included using a realistic profile for the dielectric constant {epsilon}(r). We find that the addition energies and the quasiparticle gap depend strongly on the dielectric constant of the environment {epsilon}{sub out}, while the optical gap is rather insensitive to {epsilon}{sub out}. We compare our results with recent tunneling spectroscopy measurements for InAs nanocrystals, finding excellent agreement. Our calculations for the addition energies and the quasiparticle gap of InP and Si nanocrystals serve as predictions for future experiments. (c) 2000 The American Physical Society.

• OSTI ID: 20217212
• Journal Information: Physical Review. B, Condensed Matter and Materials Physics, Vol. 62, Issue 4; Other Information: PBD: 15 Jul 2000; ISSN 1098-0121
• Country of Publication: United States
• Language: English

Related Subjects

36 MATERIALS SCIENCE
INDIUM ARSENIDES
INDIUM PHOSPHIDES
SILICON
ELECTRONIC STRUCTURE
SEMICONDUCTOR JUNCTIONS
ENERGY GAP
OPTICAL PROPERTIES
DIELECTRIC TENSOR
THEORETICAL DATA