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Title: Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen

Abstract

Electron and hole transport in compensated InGaAsN ({approx_equal}2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185-0603 (United States)
Publication Date:
OSTI Identifier:
20217004
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 77; Journal Issue: 3; Other Information: PBD: 17 Jul 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
14 SOLAR ENERGY; INDIUM ARSENIDES; GALLIUM NITRIDES; SOLAR CELLS; CRYSTAL DEFECTS; ELECTRON MOBILITY; HOLE MOBILITY; PHOTOCONDUCTIVITY; DIFFUSION LENGTH; DOPED MATERIALS; CHEMICAL VAPOR DEPOSITION; EXPERIMENTAL DATA; GALLIUM ARSENIDES

Citation Formats

Kurtz, Steven R, Allerman, A A, Seager, C H, Sieg, R M, and Jones, E D. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen. United States: N. p., 2000. Web. doi:10.1063/1.126989.
Kurtz, Steven R, Allerman, A A, Seager, C H, Sieg, R M, & Jones, E D. Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen. United States. https://doi.org/10.1063/1.126989
Kurtz, Steven R, Allerman, A A, Seager, C H, Sieg, R M, and Jones, E D. 2000. "Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen". United States. https://doi.org/10.1063/1.126989.
@article{osti_20217004,
title = {Minority carrier diffusion, defects, and localization in InGaAsN, with 2% nitrogen},
author = {Kurtz, Steven R and Allerman, A A and Seager, C H and Sieg, R M and Jones, E D},
abstractNote = {Electron and hole transport in compensated InGaAsN ({approx_equal}2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126989},
url = {https://www.osti.gov/biblio/20217004}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 3,
volume = 77,
place = {United States},
year = {Mon Jul 17 00:00:00 EDT 2000},
month = {Mon Jul 17 00:00:00 EDT 2000}
}