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Title: Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset

Abstract

Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub 0.5}Sr{sub 0.5}= CoO{sub 3} ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [2];  [3];  [4]
  1. Department of Materials and Nuclear Engineering, University of Maryland, College Park, Maryland 20742 (United States)
  2. Division of Materials Science, Brookhaven National Laboratory, Upton, New York 11793 (United States)
  3. Army Research Laboratory, Adelphi, Maryland 20783 (United States)
  4. Centre for Materials Research, University of Dundee, Dundee DD14HN, Scotland (United Kingdom)
Publication Date:
OSTI Identifier:
20216995
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 77; Journal Issue: 1; Other Information: PBD: 3 Jul 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FERROELECTRIC MATERIALS; MEMORY DEVICES; CAPACITORS; LEAD OXIDES; STRONTIUM OXIDES; COBALT OXIDES; LANTHANUM OXIDES; ZIRCONIUM OXIDES; TITANIUM OXIDES; VACANCIES; CRYSTAL DEFECTS; THIN FILMS; HYSTERESIS; EXPERIMENTAL DATA

Citation Formats

Friessnegg, T, Aggarwal, S, Ramesh, R, Nielsen, B, Poindexter, E H, and Keeble, D J. Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset. United States: N. p., 2000. Web. doi:10.1063/1.126898.
Friessnegg, T, Aggarwal, S, Ramesh, R, Nielsen, B, Poindexter, E H, & Keeble, D J. Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset. United States. https://doi.org/10.1063/1.126898
Friessnegg, T, Aggarwal, S, Ramesh, R, Nielsen, B, Poindexter, E H, and Keeble, D J. Mon . "Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset". United States. https://doi.org/10.1063/1.126898.
@article{osti_20216995,
title = {Vacancy formation in (Pb,La)(Zr,Ti)O{sub 3} capacitors with oxygen deficiency and the effect on voltage offset},
author = {Friessnegg, T and Aggarwal, S and Ramesh, R and Nielsen, B and Poindexter, E H and Keeble, D J},
abstractNote = {Vacancy-related defect profiles have been measured for La{sub 0.5}Sr{sub 0.5}CoO{sub 3}/(Pb{sub 0.9}La{sub 0.1})(Zr{sub 0.2}Ti{sub 0.8})O{sub 3}/La{sub 0.5}Sr{sub 0.5}= CoO{sub 3} ferroelectric capacitors using a variable-energy positron beam. By varying the layer thickness and the postgrowth processing in a reducing ambient, a capacitor showing oxygen deficiency dominantly in the top electrode and one with deficiency in both electrodes were produced. The capacitor with an asymmetric defect profile showed a voltage offset polarization-voltage hysteresis loop, that with a symmetric distribution of vacancy-related defects showed no offset. These results are discussed in the context of current models for imprint. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126898},
url = {https://www.osti.gov/biblio/20216995}, journal = {Applied Physics Letters},
issn = {0003-6951},
number = 1,
volume = 77,
place = {United States},
year = {2000},
month = {7}
}