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Title: Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO{sub 2}/Si interfaces

Abstract

Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO{sub 2} deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. The Ohio State University, Columbus, Ohio 43210 (United States)
  2. North Carolina State University, Raleigh, North Carolina 27695 (United States)
Publication Date:
OSTI Identifier:
20216765
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; SILICON OXIDES; INTERFACES; OXIDATION; PHOTOLUMINESCENCE; SURFACE TREATMENTS; CHEMICAL BONDS; SPECTROSCOPY; TRAPPED ELECTRONS; EXPERIMENTAL DATA

Citation Formats

Brillson, L. J., Young, A. P., White, B. D., Schaefer, J., Niimi, H., Lee, Y. M., and Lucovsky, G. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO{sub 2}/Si interfaces. United States: N. p., 2000. Web. doi:10.1116/1.591463.
Brillson, L. J., Young, A. P., White, B. D., Schaefer, J., Niimi, H., Lee, Y. M., & Lucovsky, G. Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO{sub 2}/Si interfaces. United States. doi:10.1116/1.591463.
Brillson, L. J., Young, A. P., White, B. D., Schaefer, J., Niimi, H., Lee, Y. M., and Lucovsky, G. Mon . "Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO{sub 2}/Si interfaces". United States. doi:10.1116/1.591463.
@article{osti_20216765,
title = {Depth-resolved detection and process dependence of traps at ultrathin plasma-oxidized and deposited SiO{sub 2}/Si interfaces},
author = {Brillson, L. J. and Young, A. P. and White, B. D. and Schaefer, J. and Niimi, H. and Lee, Y. M. and Lucovsky, G.},
abstractNote = {Low-energy electron-excited nanoluminescence spectroscopy reveals depth-resolved optical emission associated with traps near the interface between ultrathin SiO{sub 2} deposited by plasma-enhanced chemical vapor deposition on plasma-oxidized crystalline Si. These near-interface states exhibit a strong dependence on local chemical bonding changes introduced by thermal/gas processing, layer-specific nitridation, or depth-dependent radiation exposure. The depth-dependent results provide a means to test chemical and structural bond models used to develop advanced dielectric-semiconductor junctions. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591463},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}