skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates

Abstract

We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 {mu}m, and 2.1 kA/cm2 at 1.21 {mu}m. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
Publication Date:
OSTI Identifier:
20216764
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SEMICONDUCTOR LASERS; GALLIUM ARSENIDES; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; MOLECULAR BEAM EPITAXY; STRAINS; PHOTOLUMINESCENCE; HETEROJUNCTIONS; ELECTROLUMINESCENCE; THRESHOLD CURRENT; EXPERIMENTAL DATA

Citation Formats

Klem, J. F., Blum, O., Kurtz, S. R., Fritz, I. J., and Choquette, K. D. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates. United States: N. p., 2000. Web. doi:10.1116/1.591437.
Klem, J. F., Blum, O., Kurtz, S. R., Fritz, I. J., & Choquette, K. D. GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates. United States. doi:10.1116/1.591437.
Klem, J. F., Blum, O., Kurtz, S. R., Fritz, I. J., and Choquette, K. D. Mon . "GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates". United States. doi:10.1116/1.591437.
@article{osti_20216764,
title = {GaAsSb/InGaAs type-II quantum wells for long-wavelength lasers on GaAs substrates},
author = {Klem, J. F. and Blum, O. and Kurtz, S. R. and Fritz, I. J. and Choquette, K. D.},
abstractNote = {We have investigated the properties of GaAsSb/InGaAs type-II bilayer quantum-well structures grown by molecular-beam epitaxy for use in long-wavelength lasers on GaAs substrates. Structures with layer strains and thicknesses designed to be thermodynamically stable against dislocation formation exhibit room-temperature photoluminescence at wavelengths as long as 1.43 {mu}m. The photoluminescence emission wavelength is significantly affected by growth temperature and the sequence of layer growth (InGaAs/GaAsSb versus GaAsSb/InGaAs), suggesting that Sb and/or In segregation results in nonideal interfaces under certain growth conditions. At low-injection currents, double-heterostructure lasers with GaAsSb/InGaAs bilayer quantum-well active regions display electroluminescence at wavelengths comparable to those obtained in photoluminescence, but at higher currents the electroluminescence shifts to shorter wavelengths. Lasers have been obtained with threshold current densities of 120 A/cm2 at 1.17 {mu}m, and 2.1 kA/cm2 at 1.21 {mu}m. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591437},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}