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Title: Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy

Abstract

Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm{sup 2} for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm{sup 2} and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [2]
  1. Solid State and Photonics Laboratory, Stanford University, Via Ortega, Stanford, California 94305 (United States)
  2. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
Publication Date:
OSTI Identifier:
20216760
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; 42 ENGINEERING; SEMICONDUCTOR LASERS; MOLECULAR BEAM EPITAXY; INDIUM NITRIDES; GALLIUM ARSENIDES; PHOTOLUMINESCENCE; ANNEALING; SPECTRAL SHIFT; CURRENT DENSITY; EXPERIMENTAL DATA

Citation Formats

Coldren, C. W., Spruytte, S. G., Harris, J. S., and Larson, M. C. Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy. United States: N. p., 2000. Web. doi:10.1116/1.591408.
Coldren, C. W., Spruytte, S. G., Harris, J. S., & Larson, M. C. Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy. United States. doi:10.1116/1.591408.
Coldren, C. W., Spruytte, S. G., Harris, J. S., and Larson, M. C. Mon . "Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy". United States. doi:10.1116/1.591408.
@article{osti_20216760,
title = {Group III nitride-arsenide long wavelength lasers grown by elemental source molecular beam epitaxy},
author = {Coldren, C. W. and Spruytte, S. G. and Harris, J. S. and Larson, M. C.},
abstractNote = {Elemental source molecular beam epitaxy was used to grow InGaNAs quantum well samples, edge-emitting laser diodes, and vertical-cavity laser diodes on GaAs substrates. The quantum well samples exhibited an as-grown room temperature photoluminescence peak beyond 1310 nm which both increased dramatically in intensity and blueshifted with thermal annealing. Edge emitting laser diodes had threshold current densities as low as 450 and 750 A/cm{sup 2} for single and triple quantum well active regions, respectively, and emitted light at 1220-1250 nm. The vertical cavity laser diodes emitted light at 1200 nm and had threshold current densities of 3 kA/cm{sup 2} and efficiencies of 0.066 W/A. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591408},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}