skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys

Abstract

A technique based on the principle of coupling an evanescent wave via a prism into a semiconductor thin film has been used to determine simultaneously the composition and the thickness of II-VI semiconductor ternary alloys. This approach, which determines the indices of refraction n with high precision (at least 0.1%), and also concurrently determines the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families; Zn{sub 1-x}Cd{sub x}Se, Zn{sub 1-x}Mg{sub x}Se, Zn{sub 1-x}Be{sub x}Se, Zn{sub 1-x}Mn{sub x}Se, and ZnSe{sub 1-x}Te{sub x}. The composition determined by x-ray measurements allows one to generate a calibration between n and the alloy composition, which is used subsequently to derive the alloy composition of the ternary specimen by measuring only its value of n. Since the prism coupler method also determines the thickness of the film, the growth rates are also obtained concurrently. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [1]
  1. Department of Physics, University of Notre Dame, Notre Dame, Indiana 46556 (United States)
Publication Date:
OSTI Identifier:
20216759
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ZINC SELENIDES; CADMIUM SELENIDES; MANGANESE SELENIDES; TELLURIDES; CHEMICAL COMPOSITION; MOLECULAR BEAM EPITAXY; THICKNESS; X-RAY DIFFRACTION; TERNARY ALLOY SYSTEMS; BERYLLIUM SELENIDES; EXPERIMENTAL DATA

Citation Formats

Peiris, F. C., Lee, S., Bindley, U., and Furdyna, J. K. Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys. United States: N. p., 2000. Web. doi:10.1116/1.591400.
Peiris, F. C., Lee, S., Bindley, U., & Furdyna, J. K. Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys. United States. doi:10.1116/1.591400.
Peiris, F. C., Lee, S., Bindley, U., and Furdyna, J. K. Mon . "Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys". United States. doi:10.1116/1.591400.
@article{osti_20216759,
title = {Precise and efficient ex situ technique for determining compositions and growth rates in molecular-beam epitaxy grown semiconductor alloys},
author = {Peiris, F. C. and Lee, S. and Bindley, U. and Furdyna, J. K.},
abstractNote = {A technique based on the principle of coupling an evanescent wave via a prism into a semiconductor thin film has been used to determine simultaneously the composition and the thickness of II-VI semiconductor ternary alloys. This approach, which determines the indices of refraction n with high precision (at least 0.1%), and also concurrently determines the epilayer thicknesses with an uncertainty of less than 0.5%, has been applied to a series of molecular-beam epitaxy grown ternary alloy families; Zn{sub 1-x}Cd{sub x}Se, Zn{sub 1-x}Mg{sub x}Se, Zn{sub 1-x}Be{sub x}Se, Zn{sub 1-x}Mn{sub x}Se, and ZnSe{sub 1-x}Te{sub x}. The composition determined by x-ray measurements allows one to generate a calibration between n and the alloy composition, which is used subsequently to derive the alloy composition of the ternary specimen by measuring only its value of n. Since the prism coupler method also determines the thickness of the film, the growth rates are also obtained concurrently. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591400},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}