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Title: Real-time measurements of stress relaxation in InGaAs/GaAs

Abstract

Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520 degree sign C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [1]
  1. Division of Engineering, Brown University, Providence, Rhode Island 02912 (United States)
Publication Date:
OSTI Identifier:
20216758
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; INDIUM ARSENIDES; GALLIUM ARSENIDES; STRESS RELAXATION; DISLOCATIONS; STRAINS; HETEROJUNCTIONS; EXPERIMENTAL DATA

Citation Formats

Beresford, R., Yin, J., Tetz, K., and Chason, E. Real-time measurements of stress relaxation in InGaAs/GaAs. United States: N. p., 2000. Web. doi:10.1116/1.591397.
Beresford, R., Yin, J., Tetz, K., & Chason, E. Real-time measurements of stress relaxation in InGaAs/GaAs. United States. doi:10.1116/1.591397.
Beresford, R., Yin, J., Tetz, K., and Chason, E. Mon . "Real-time measurements of stress relaxation in InGaAs/GaAs". United States. doi:10.1116/1.591397.
@article{osti_20216758,
title = {Real-time measurements of stress relaxation in InGaAs/GaAs},
author = {Beresford, R. and Yin, J. and Tetz, K. and Chason, E.},
abstractNote = {Real-time observations of the film stress-thickness product are presented from the growth of strained InGaAs/GaAs layers. Growth temperatures of 440 and 520 degree sign C were used with a nominal In composition of x=0.20. The data are compared with a model of relaxation kinetics based on dislocation glide velocity. The residual strain is higher than predicted and the relaxation is not markedly temperature dependent, in contrast to the model. These discrepancies suggest that dislocation blocking causes incomplete relaxation in this material system. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591397},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}