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Title: Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry

Abstract

Asymmetric depth profiles of elemental and molecular secondary ions are obtained during secondary ion mass spectrometry analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs{sup +} ion beam. The sputter-etching rate R and the secondary ion yield Y from TiN(001) layers are strongly dependent on the incidence angle of the primary ion beam. When the azimuthal angle between the incident beam and one of the in-plane <100> directions in TiN(001) is varied from 0 degree sign to 40 degree sign , R{sub TiN(001)} varies by more than 40% and Y{sub TiN(001)} by nearly a factor of 3. In contrast, for polycrystalline TiN layers, R{sub polyTiN} and Y{sub polyTiN} are invariant with incident beam angle. Channeling of primary ions and secondary recoils through 0.106-nm-wide channels between highly aligned (100) or (010) planes in TiN(001), and the lack of such correlated long-range alignment in polycrystalline TiN, are the major reasons for the observed differences. Channeling in the TiN(001) layer results in a sharp decrease of Y{sub Ti} in the Ti layer immediately prior to the Ti/TiN(001) interface and increases the interface width, thus degrading depth resolution. These profile distortion effects can be eliminated either by sample rotation during profiling or by using an O{submore » 2}{sup +} primary beam. (c) 2000 American Vacuum Society.« less

Authors:
 [1];  [2];  [2];  [2];  [2];  [3]
  1. Department of Materials Science, Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  2. Coordinated Science Laboratory, Materials Research Laboratory, and Department of Materials Science, University of Illinois, Urbana, Illinois 61801 (United States)
  3. National Institute of Standards and Technology, Gaithersburg, Maryland 20899 (United States)
Publication Date:
OSTI Identifier:
20216757
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; TITANIUM NITRIDES; TITANIUM; LAYERS; MASS SPECTRA; ION CHANNELING; CESIUM IONS; SPUTTERING; POLYCRYSTALS; EXPERIMENTAL DATA

Citation Formats

Ramanath, G., Greene, J. E., Petrov, I., Baker, J. E., Allen, L. H., and Gillen, G. Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry. United States: N. p., 2000. Web. doi:10.1116/1.591387.
Ramanath, G., Greene, J. E., Petrov, I., Baker, J. E., Allen, L. H., & Gillen, G. Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry. United States. doi:10.1116/1.591387.
Ramanath, G., Greene, J. E., Petrov, I., Baker, J. E., Allen, L. H., and Gillen, G. Mon . "Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry". United States. doi:10.1116/1.591387.
@article{osti_20216757,
title = {Channeling-induced asymmetric distortion of depth profiles from polycrystalline-TiN/Ti/TiN(001) trilayers during secondary ion mass spectrometry},
author = {Ramanath, G. and Greene, J. E. and Petrov, I. and Baker, J. E. and Allen, L. H. and Gillen, G.},
abstractNote = {Asymmetric depth profiles of elemental and molecular secondary ions are obtained during secondary ion mass spectrometry analyses of polycrystalline-TiN/Ti/TiN(001) trilayers using a Cs{sup +} ion beam. The sputter-etching rate R and the secondary ion yield Y from TiN(001) layers are strongly dependent on the incidence angle of the primary ion beam. When the azimuthal angle between the incident beam and one of the in-plane <100> directions in TiN(001) is varied from 0 degree sign to 40 degree sign , R{sub TiN(001)} varies by more than 40% and Y{sub TiN(001)} by nearly a factor of 3. In contrast, for polycrystalline TiN layers, R{sub polyTiN} and Y{sub polyTiN} are invariant with incident beam angle. Channeling of primary ions and secondary recoils through 0.106-nm-wide channels between highly aligned (100) or (010) planes in TiN(001), and the lack of such correlated long-range alignment in polycrystalline TiN, are the major reasons for the observed differences. Channeling in the TiN(001) layer results in a sharp decrease of Y{sub Ti} in the Ti layer immediately prior to the Ti/TiN(001) interface and increases the interface width, thus degrading depth resolution. These profile distortion effects can be eliminated either by sample rotation during profiling or by using an O{sub 2}{sup +} primary beam. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591387},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}