Arrays of field emission cathode structures with sub-300 nm gates
- Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
- Candescent Technologies Corporation, San Jose, California 95119 (United States)
A novel field emission cathode process has been developed to produce cathode arrays with individual emitter structures having gates with <300 nm diameters. Ion tracking lithography was utilized to pattern submicron features, which can be controlled over the range 30-300 nm, and to create self-aligned and nanosized, gated emitter structures. Nanocone emitter tips were deposited into the gate structure using a variation of the Spindt process. Field emitter arrays having {approx}300 nm gate diameters and an emitter density of 10{sup 8}/cm{sup 2} exhibited a current density of 4 mA/cm{sup 2} for a 45 V gate bias. This ion tracking lithographic approach is suitable and scalable for large flat panel video displays and appears to be commercially viable. (c) 2000 American Vacuum Society.
- OSTI ID:
- 20216755
- Journal Information:
- Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena, Vol. 18, Issue 3; Other Information: PBD: May 2000; ISSN 0734-211X
- Country of Publication:
- United States
- Language:
- English
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