skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Arrays of field emission cathode structures with sub-300 nm gates

Abstract

A novel field emission cathode process has been developed to produce cathode arrays with individual emitter structures having gates with <300 nm diameters. Ion tracking lithography was utilized to pattern submicron features, which can be controlled over the range 30-300 nm, and to create self-aligned and nanosized, gated emitter structures. Nanocone emitter tips were deposited into the gate structure using a variation of the Spindt process. Field emitter arrays having {approx}300 nm gate diameters and an emitter density of 10{sup 8}/cm{sup 2} exhibited a current density of 4 mA/cm{sup 2} for a 45 V gate bias. This ion tracking lithographic approach is suitable and scalable for large flat panel video displays and appears to be commercially viable. (c) 2000 American Vacuum Society.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
  2. Candescent Technologies Corporation, San Jose, California 95119 (United States)
Publication Date:
OSTI Identifier:
20216755
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CATHODES; FIELD EMISSION; MICROELECTRONICS; FABRICATION; CURRENT DENSITY; EXPERIMENTAL DATA

Citation Formats

Bernhardt, A. F., Contolini, R. J., Jankowski, A. F., Liberman, V., Morse, J. D., Musket, R. G., Barton, R., Macaulay, J., and Spindt, C. Arrays of field emission cathode structures with sub-300 nm gates. United States: N. p., 2000. Web. doi:10.1116/1.591363.
Bernhardt, A. F., Contolini, R. J., Jankowski, A. F., Liberman, V., Morse, J. D., Musket, R. G., Barton, R., Macaulay, J., & Spindt, C. Arrays of field emission cathode structures with sub-300 nm gates. United States. doi:10.1116/1.591363.
Bernhardt, A. F., Contolini, R. J., Jankowski, A. F., Liberman, V., Morse, J. D., Musket, R. G., Barton, R., Macaulay, J., and Spindt, C. Mon . "Arrays of field emission cathode structures with sub-300 nm gates". United States. doi:10.1116/1.591363.
@article{osti_20216755,
title = {Arrays of field emission cathode structures with sub-300 nm gates},
author = {Bernhardt, A. F. and Contolini, R. J. and Jankowski, A. F. and Liberman, V. and Morse, J. D. and Musket, R. G. and Barton, R. and Macaulay, J. and Spindt, C.},
abstractNote = {A novel field emission cathode process has been developed to produce cathode arrays with individual emitter structures having gates with <300 nm diameters. Ion tracking lithography was utilized to pattern submicron features, which can be controlled over the range 30-300 nm, and to create self-aligned and nanosized, gated emitter structures. Nanocone emitter tips were deposited into the gate structure using a variation of the Spindt process. Field emitter arrays having {approx}300 nm gate diameters and an emitter density of 10{sup 8}/cm{sup 2} exhibited a current density of 4 mA/cm{sup 2} for a 45 V gate bias. This ion tracking lithographic approach is suitable and scalable for large flat panel video displays and appears to be commercially viable. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591363},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}