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Title: Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization

Abstract

We report a versatile process for the fabrication of dissimilar metal electrodes with a minimum interelectrode distance of less than 6 nm using electron beam lithography and liftoff pattern transfer. This technique provides a controllable and reproducible method for creating structures suited for the electrical characterization of asymmetric molecules for molecular electronics applications. Electrode structures employing pairs of Au electrodes and non-Au electrodes were fabricated in three different patterns. Parallel electrode structures 300 {mu}m long with interelectrode distances as low as 10 nm, 75 nm wide electrode pairs with interelectrode distances less than 6 nm, and a multiterminal electrode structure with reproducible interelectrode distances of 8 nm were realized using this technique. The processing issues associated with the fabrication of these structures are discussed along with the intended application of these devices. (c) 2000 American Vacuum Society.

Authors:
 [1];  [2];  [2];  [3];  [3]
  1. Department of Electrical and Computer Engineering, University of Tennessee, Knoxville, Tennessee 37996 (United States)
  2. Cornell Nanofabrication Facility, Cornell University, Ithaca, New York 14853 (United States)
  3. Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
Publication Date:
OSTI Identifier:
20216754
Resource Type:
Journal Article
Journal Name:
Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena
Additional Journal Information:
Journal Volume: 18; Journal Issue: 3; Other Information: PBD: May 2000; Journal ID: ISSN 0734-211X
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; ELECTRODES; INTEGRATED CIRCUITS; MOLECULES; GOLD; FABRICATION; ELECTRONIC CIRCUITS; HETEROJUNCTIONS; EXPERIMENTAL DATA

Citation Formats

Guillorn, Michael A., Carr, Dustin W., Tiberio, Richard C., Greenbaum, Elias, and Simpson, Michael L. Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization. United States: N. p., 2000. Web. doi:10.1116/1.591355.
Guillorn, Michael A., Carr, Dustin W., Tiberio, Richard C., Greenbaum, Elias, & Simpson, Michael L. Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization. United States. doi:10.1116/1.591355.
Guillorn, Michael A., Carr, Dustin W., Tiberio, Richard C., Greenbaum, Elias, and Simpson, Michael L. Mon . "Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization". United States. doi:10.1116/1.591355.
@article{osti_20216754,
title = {Fabrication of dissimilar metal electrodes with nanometer interelectrode distance for molecular electronic device characterization},
author = {Guillorn, Michael A. and Carr, Dustin W. and Tiberio, Richard C. and Greenbaum, Elias and Simpson, Michael L.},
abstractNote = {We report a versatile process for the fabrication of dissimilar metal electrodes with a minimum interelectrode distance of less than 6 nm using electron beam lithography and liftoff pattern transfer. This technique provides a controllable and reproducible method for creating structures suited for the electrical characterization of asymmetric molecules for molecular electronics applications. Electrode structures employing pairs of Au electrodes and non-Au electrodes were fabricated in three different patterns. Parallel electrode structures 300 {mu}m long with interelectrode distances as low as 10 nm, 75 nm wide electrode pairs with interelectrode distances less than 6 nm, and a multiterminal electrode structure with reproducible interelectrode distances of 8 nm were realized using this technique. The processing issues associated with the fabrication of these structures are discussed along with the intended application of these devices. (c) 2000 American Vacuum Society.},
doi = {10.1116/1.591355},
journal = {Journal of Vacuum Science and Technology. B, Microelectronics Processing and Phenomena},
issn = {0734-211X},
number = 3,
volume = 18,
place = {United States},
year = {2000},
month = {5}
}