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Title: Electronic Raman scattering in the perovskite manganese oxides

Abstract

We present an electronic Raman scattering study of the colossal magnetoresistance manganese perovskites as a function of temperature, magnetic field, symmetry, and doping. The low-frequency electronic Raman spectrum of these materials exhibits a distinctive change through the paramagnetic insulator/ferromagnetic metal transition, characterized by a transformation from a diffusive scattering response to a flat continuum response. We also find that the magnetic-field dependence of electronic Raman scattering in the manganese perovskites is both highly anisotropic and indicative of an inhomogeneous ferromagnetic phase. (c) 1999 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [2];  [3];  [4]
  1. Department of Physics and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
  2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
  3. (United States)
  4. Department of Material Science and Engineering and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana-Champaign, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
20216674
Resource Type:
Journal Article
Journal Name:
AIP Conference Proceedings
Additional Journal Information:
Journal Volume: 483; Journal Issue: 1; Other Information: PBD: 1 Sep 1999; Journal ID: ISSN 0094-243X
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; HIGH-TC SUPERCONDUCTORS; PEROVSKITES; PRASEODYMIUM OXIDES; STRONTIUM OXIDES; MANGANESE OXIDES; RAMAN SPECTROSCOPY; PHASE TRANSFORMATIONS; ELECTRON-PHONON COUPLING; EXPERIMENTAL DATA

Citation Formats

Liu, H. L., Yoon, S., Cooper, S. L., Cheong, S-W., Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, and Han, P. D. Electronic Raman scattering in the perovskite manganese oxides. United States: N. p., 1999. Web. doi:10.1063/1.59603.
Liu, H. L., Yoon, S., Cooper, S. L., Cheong, S-W., Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, & Han, P. D. Electronic Raman scattering in the perovskite manganese oxides. United States. doi:10.1063/1.59603.
Liu, H. L., Yoon, S., Cooper, S. L., Cheong, S-W., Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855, and Han, P. D. Wed . "Electronic Raman scattering in the perovskite manganese oxides". United States. doi:10.1063/1.59603.
@article{osti_20216674,
title = {Electronic Raman scattering in the perovskite manganese oxides},
author = {Liu, H. L. and Yoon, S. and Cooper, S. L. and Cheong, S-W. and Department of Physics and Astronomy, Rutgers University, Piscataway, New Jersey 08855 and Han, P. D.},
abstractNote = {We present an electronic Raman scattering study of the colossal magnetoresistance manganese perovskites as a function of temperature, magnetic field, symmetry, and doping. The low-frequency electronic Raman spectrum of these materials exhibits a distinctive change through the paramagnetic insulator/ferromagnetic metal transition, characterized by a transformation from a diffusive scattering response to a flat continuum response. We also find that the magnetic-field dependence of electronic Raman scattering in the manganese perovskites is both highly anisotropic and indicative of an inhomogeneous ferromagnetic phase. (c) 1999 American Institute of Physics.},
doi = {10.1063/1.59603},
journal = {AIP Conference Proceedings},
issn = {0094-243X},
number = 1,
volume = 483,
place = {United States},
year = {1999},
month = {9}
}