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Title: Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers

Abstract

We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1x3) , we find that there are actually three distinct, stable (4x3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth. (c) 2000 The American Physical Society.

Authors:
; ; ; ; ; ;  [1];  [1];  [2];  [1]
  1. Harvard University, Cambridge, Massachusetts 02138 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
20216594
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 84; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM ANTIMONIDES; ALUMINIUM COMPOUNDS; MOLECULAR BEAM EPITAXY; STRUCTURAL CHEMICAL ANALYSIS; ELECTRON DIFFRACTION; SURFACES; NUCLEATION; GROWTH; DIMERS; EXPERIMENTAL DATA

Citation Formats

Barvosa-Carter, W., Bracker, A. S., Culbertson, J. C., Nosho, B. Z., Shanabrook, B. V., Whitman, L. J., Kim, Hanchul, Modine, N. A., Sandia National Laboratories, Albuquerque, New Mexico 87185, and Kaxiras, E. Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers. United States: N. p., 2000. Web. doi:10.1103/PhysRevLett.84.4649.
Barvosa-Carter, W., Bracker, A. S., Culbertson, J. C., Nosho, B. Z., Shanabrook, B. V., Whitman, L. J., Kim, Hanchul, Modine, N. A., Sandia National Laboratories, Albuquerque, New Mexico 87185, & Kaxiras, E. Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers. United States. doi:10.1103/PhysRevLett.84.4649.
Barvosa-Carter, W., Bracker, A. S., Culbertson, J. C., Nosho, B. Z., Shanabrook, B. V., Whitman, L. J., Kim, Hanchul, Modine, N. A., Sandia National Laboratories, Albuquerque, New Mexico 87185, and Kaxiras, E. Mon . "Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers". United States. doi:10.1103/PhysRevLett.84.4649.
@article{osti_20216594,
title = {Structure of III-Sb(001) Growth Surfaces: The Role of Heterodimers},
author = {Barvosa-Carter, W. and Bracker, A. S. and Culbertson, J. C. and Nosho, B. Z. and Shanabrook, B. V. and Whitman, L. J. and Kim, Hanchul and Modine, N. A. and Sandia National Laboratories, Albuquerque, New Mexico 87185 and Kaxiras, E.},
abstractNote = {We have determined the structure of AlSb and GaSb (001) surfaces prepared by molecular beam epitaxy under typical Sb-rich device growth conditions. Within the range of flux and temperature where the diffraction pattern is nominally (1x3) , we find that there are actually three distinct, stable (4x3) surface reconstructions. The three structures differ from any previously proposed for these growth conditions, with two of the reconstructions incorporating mixed III-V dimers within the Sb surface layer. These heterodimers appear to play an important role in island nucleation and growth. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevLett.84.4649},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 20,
volume = 84,
place = {United States},
year = {2000},
month = {5}
}