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Title: Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages

Abstract

The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. (c) 2000 The American Physical Society.

Authors:
 [1];  [2];  [1]
  1. University of Wisconsin-Madison, Madison, Wisconsin 53706 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1413 (United States)
Publication Date:
OSTI Identifier:
20216593
Resource Type:
Journal Article
Journal Name:
Physical Review Letters
Additional Journal Information:
Journal Volume: 84; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0031-9007
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; GERMANIUM; LAYERS; ELECTRON MICROSCOPY; MIXING; INTERFACES; THIN FILMS; GROWTH; EXPERIMENTAL DATA

Citation Formats

Qin, X. R., Swartzentruber, B. S., and Lagally, M. G. Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages. United States: N. p., 2000. Web. doi:10.1103/PhysRevLett.84.4645.
Qin, X. R., Swartzentruber, B. S., & Lagally, M. G. Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages. United States. doi:10.1103/PhysRevLett.84.4645.
Qin, X. R., Swartzentruber, B. S., and Lagally, M. G. Mon . "Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages". United States. doi:10.1103/PhysRevLett.84.4645.
@article{osti_20216593,
title = {Scanning Tunneling Microscopy Identification of Atomic-Scale Intermixing on Si(100) at Submonolayer Ge Coverages},
author = {Qin, X. R. and Swartzentruber, B. S. and Lagally, M. G.},
abstractNote = {The positions of Ge atoms intermixed in the Si(100) surface at very low concentration are identified using empty-state imaging in scanning tunneling microscopy. A measurable degree of place exchange occurs at temperatures as low as 330 K. Contrary to earlier conclusions, good differentiation between Si atoms and Ge atoms can be achieved by proper imaging conditions. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevLett.84.4645},
journal = {Physical Review Letters},
issn = {0031-9007},
number = 20,
volume = 84,
place = {United States},
year = {2000},
month = {5}
}