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Title: Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

Abstract

The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20216566
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; DOPED MATERIALS; SELENIUM ADDITIONS; CHARGE CARRIERS; ELECTRONS; EXPERIMENTAL DATA

Citation Formats

Yu, K M, Walukiewicz, W, Shan, W, Ager, III, J W, Wu, J, Haller, E E, Geisz, J F, Friedman, D J, and Olson, J M. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.R13337.
Yu, K M, Walukiewicz, W, Shan, W, Ager, III, J W, Wu, J, Haller, E E, Geisz, J F, Friedman, D J, & Olson, J M. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys. United States. https://doi.org/10.1103/PhysRevB.61.R13337
Yu, K M, Walukiewicz, W, Shan, W, Ager, III, J W, Wu, J, Haller, E E, Geisz, J F, Friedman, D J, and Olson, J M. 2000. "Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys". United States. https://doi.org/10.1103/PhysRevB.61.R13337.
@article{osti_20216566,
title = {Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys},
author = {Yu, K M and Walukiewicz, W and Shan, W and Ager, III, J W and Wu, J and Haller, E E and Geisz, J F and Friedman, D J and Olson, J M},
abstractNote = {The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.R13337},
url = {https://www.osti.gov/biblio/20216566}, journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 61,
place = {United States},
year = {Mon May 15 00:00:00 EDT 2000},
month = {Mon May 15 00:00:00 EDT 2000}
}