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Title: Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys

Abstract

The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1];  [1];  [1];  [1];  [2];  [2];  [2]
  1. Center for Advanced Materials, Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. National Renewable Energy Laboratory, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20216566
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; GALLIUM ARSENIDES; GALLIUM NITRIDES; INDIUM ARSENIDES; DOPED MATERIALS; SELENIUM ADDITIONS; CHARGE CARRIERS; ELECTRONS; EXPERIMENTAL DATA

Citation Formats

Yu, K. M., Walukiewicz, W., Shan, W., Ager, J. W. III, Wu, J., Haller, E. E., Geisz, J. F., Friedman, D. J., and Olson, J. M. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.R13337.
Yu, K. M., Walukiewicz, W., Shan, W., Ager, J. W. III, Wu, J., Haller, E. E., Geisz, J. F., Friedman, D. J., & Olson, J. M. Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys. United States. doi:10.1103/PhysRevB.61.R13337.
Yu, K. M., Walukiewicz, W., Shan, W., Ager, J. W. III, Wu, J., Haller, E. E., Geisz, J. F., Friedman, D. J., and Olson, J. M. Mon . "Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys". United States. doi:10.1103/PhysRevB.61.R13337.
@article{osti_20216566,
title = {Nitrogen-induced increase of the maximum electron concentration in group III-N-V alloys},
author = {Yu, K. M. and Walukiewicz, W. and Shan, W. and Ager, J. W. III and Wu, J. and Haller, E. E. and Geisz, J. F. and Friedman, D. J. and Olson, J. M.},
abstractNote = {The maximum free-electron concentration is observed to increase dramatically with the nitrogen content x in heavily Se-doped Ga{sub 1-3x}In{sub 3x}N{sub x}As{sub 1-x} (0{<=}x<0.033) films. For example, an electron concentration of 7x10{sup 19} cm{sup -3} was observed at x=0.033; a value more than 20 times larger than that observed in GaAs films grown under similar conditions. It is shown that the increase is caused by a combination of two effects: (1) a downward shift of the conduction band and (2) an increase of the electron effective mass caused by flattening of the conduction-band minimum. Both these effects are due to modifications to the conduction-band structure caused by an anticrossing interaction of a localized N state and the conduction band of the III-V host. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.R13337},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}