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Title: Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells

Abstract

The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [2];  [3]
  1. Pusan National University, Pusan 609-735, Korea (Korea, Republic of)
  2. (United States)
  3. University of Tennessee, Knoxville, Tennessee 37996 (United States)
Publication Date:
OSTI Identifier:
20216561
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; MAGNETIC SEMICONDUCTORS; THIN FILMS; SEMICONDUCTOR JUNCTIONS; ELECTRONIC STRUCTURE; CARRIER DENSITY; THEORETICAL DATA

Citation Formats

Hong, S. P., Yi, K. S., University of Tennessee, Knoxville, Tennessee 37996, and Quinn, J. J. Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.13745.
Hong, S. P., Yi, K. S., University of Tennessee, Knoxville, Tennessee 37996, & Quinn, J. J. Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells. United States. doi:10.1103/PhysRevB.61.13745.
Hong, S. P., Yi, K. S., University of Tennessee, Knoxville, Tennessee 37996, and Quinn, J. J. Mon . "Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells". United States. doi:10.1103/PhysRevB.61.13745.
@article{osti_20216561,
title = {Self-consistent electronic structure of spin-polarized dilute magnetic semiconductor quantum wells},
author = {Hong, S. P. and Yi, K. S. and University of Tennessee, Knoxville, Tennessee 37996 and Quinn, J. J.},
abstractNote = {The electronic properties of spin-symmetry-broken dilute magnetic semiconductor quantum wells are investigated self-consistently at zero temperature. The spin-split subband structure and carrier concentration of modulation-doped quantum wells are examined in the presence of a strong magnetic field. The effects of exchange and correlations of electrons are included in a local-spin-density-functional approximation. We demonstrate that exchange correlation of electrons decreases the spin-split subband energy but enhances the carrier density in a spin-polarized quantum well. We also observe that as the magnetic field increases, the concentration of spin-down (majority) electrons increases but that of spin-up (minority) electrons decreases. The effect of orbital quantization on the in-plane motion of electrons is also examined and shows a sawtoothlike variation in subband electron concentrations as the magnetic-field intensity increases. The latter variation is attributed to the presence of ionized donors acting as the electron reservoir, which is partially responsible for the formation of the integer quantum Hall plateaus. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.13745},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}