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Title: Semiconductor surface diffusion: Nonthermal effects of photon illumination

Abstract

Nonthermal influences of photon illumination on surface diffusion at high temperatures have been measured experimentally. Activation energies and pre-exponential factors for diffusion of germanium, indium, and antimony on silicon change by up to 0.3 eV and two orders of magnitude, respectively, in response to illumination by photons having energies greater than the substrate band gap. The parameters decrease for n-type material and increase for p-type material. Aided by results from photoreflectance spectroscopy, we suggest that motion of the surface quasi-Fermi-level for minority carriers accounts for much of the effect by changing the charge states of surface vacancies. An additional adatom-vacancy complexation mechanism appears to operate on p-type substrates. The results have significant implications for aspects of microelectronics fabrication by rapid thermal processing that are governed by surface mobility. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1]
  1. Department of Chemical Engineering, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
20216560
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; INDIUM; LASER RADIATION; DIFFUSION; SURFACE PROPERTIES; GERMANIUM; ANTIMONY; OPTICAL REFLECTION; EXPERIMENTAL DATA

Citation Formats

Ditchfield, R., Llera-Rodriguez, D., and Seebauer, E. G. Semiconductor surface diffusion: Nonthermal effects of photon illumination. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.13710.
Ditchfield, R., Llera-Rodriguez, D., & Seebauer, E. G. Semiconductor surface diffusion: Nonthermal effects of photon illumination. United States. doi:10.1103/PhysRevB.61.13710.
Ditchfield, R., Llera-Rodriguez, D., and Seebauer, E. G. Mon . "Semiconductor surface diffusion: Nonthermal effects of photon illumination". United States. doi:10.1103/PhysRevB.61.13710.
@article{osti_20216560,
title = {Semiconductor surface diffusion: Nonthermal effects of photon illumination},
author = {Ditchfield, R. and Llera-Rodriguez, D. and Seebauer, E. G.},
abstractNote = {Nonthermal influences of photon illumination on surface diffusion at high temperatures have been measured experimentally. Activation energies and pre-exponential factors for diffusion of germanium, indium, and antimony on silicon change by up to 0.3 eV and two orders of magnitude, respectively, in response to illumination by photons having energies greater than the substrate band gap. The parameters decrease for n-type material and increase for p-type material. Aided by results from photoreflectance spectroscopy, we suggest that motion of the surface quasi-Fermi-level for minority carriers accounts for much of the effect by changing the charge states of surface vacancies. An additional adatom-vacancy complexation mechanism appears to operate on p-type substrates. The results have significant implications for aspects of microelectronics fabrication by rapid thermal processing that are governed by surface mobility. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.13710},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}