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Title: Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering

Abstract

Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E{sub +} located in the conduction band of GaAs{sub 1-x}N{sub x} (0.001{<=}x{<=}0.022). Our data demonstrate that the E{sub +} state is derived from the nitrogen-induced {gamma}-L mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1];  [1]
  1. National Renewable Energy Laboratory, 1617 Cole Boulevard, Golden, Colorado 80401 (United States)
Publication Date:
OSTI Identifier:
20216559
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; GALLIUM ARSENIDES; RAMAN SPECTRA; ELECTRONIC STRUCTURE; IMPURITIES; NITROGEN; EXPERIMENTAL DATA

Citation Formats

Cheong, Hyeonsik M., Zhang, Yong, Mascarenhas, Angelo, and Geisz, John F. Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.13687.
Cheong, Hyeonsik M., Zhang, Yong, Mascarenhas, Angelo, & Geisz, John F. Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering. United States. doi:10.1103/PhysRevB.61.13687.
Cheong, Hyeonsik M., Zhang, Yong, Mascarenhas, Angelo, and Geisz, John F. Mon . "Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering". United States. doi:10.1103/PhysRevB.61.13687.
@article{osti_20216559,
title = {Nitrogen-induced levels in GaAs{sub 1-x}N{sub x} studied with resonant Raman scattering},
author = {Cheong, Hyeonsik M. and Zhang, Yong and Mascarenhas, Angelo and Geisz, John F.},
abstractNote = {Resonant Raman scattering is used to study the nature of the recently discovered nitrogen-induced level E{sub +} located in the conduction band of GaAs{sub 1-x}N{sub x} (0.001{<=}x{<=}0.022). Our data demonstrate that the E{sub +} state is derived from the nitrogen-induced {gamma}-L mixing of the bulk GaAs states and that it is not an isolated nitrogen impurity level. A broadening of the GaAs-like longitudinal-optical phonon line and an enhancement of the transverse-optical phonon line is observed near resonance, which is interpreted as being due to resonance with strongly localized states. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.13687},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 20,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}