Optical properties of ZnS{sub 1-x}Se{sub x} alloys fabricated by plasma-induced isoelectronic substitution
- Department of Physics, Khon Kaen University, Khon Kaen 40002, (Thailand)
- University of California, Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
Nonequilibrium growth of thin-film ternary ZnS{sub 1-x}Se{sub x} semiconductor alloys was accomplished using physical vapor deposition with simultaneous electron cyclotron resonance H{sub 2}S plasma activation. Substrate temperature, gas flow, and plasma power determine the ZnS{sub 1-x}Se{sub x} alloy composition and structure. Integrated optical transmission spectra for the ZnS{sub 1-x}Se{sub x} semiconductor alloys as a function of H{sub 2}S plasma power are presented. Using the {alpha}{sup 2} vs h{nu} plots for the various ZnS{sub 1-x}Se{sub x} films, the optical band gap E{sub g} is extrapolated from each curve. This methodology yields the values of the band gap as a function of stoichiometry. We observe that the plasma induced isoelectronic substitution of S into the ZnSe lattice increases the band gap. This study shows that plasma-induced isoelectronic substitution is technologically feasible and useful for fabricating ternary II-VI alloys under nonequilibrium conditions. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216520
- Journal Information:
- Journal of Applied Physics, Vol. 87, Issue 12; Other Information: PBD: 15 Jun 2000; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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