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Title: Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling

Abstract

It has been shown recently that Au labeling [V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998)] can be used to profile vacancy-type defects located near half the projected range ((1/2) R{sub p}) in MeV-implanted Si. In this letter, we have determined the ratio of vacancies annihilated to Au atoms trapped (calibration factor ''k'') for the Au-labeling technique. The calibration experiment consisted of three steps: (1) a 2 MeV Si{sup +} implant into Si(100) followed by annealing at 815 degree sign C to form stable excess vacancy defects; (2) controlled injection of interstitials in the (1/2) R{sub p} region of the above implant via 600 keV Si{sup +} ions followed by annealing to dissolve the {l_brace}311{r_brace} defects; and (3) Au labeling. The reduction in Au concentration in the near-surface region (0.1-1.6 {mu}m) with increasing interstitial injection provides the most direct evidence so far that Au labeling detects the vacancy-type defects. By correlating this reduction in Au with the known number of interstitials injected, it was determined that k=1.2{+-}0.2 vacancies per trapped Au atom. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2];  [2];  [2]
  1. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831 (United States)
  2. Bell Laboratories, Lucent Technologies, Murray Hill, New Jersey 07974 (United States)
Publication Date:
OSTI Identifier:
20216505
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 23; Other Information: PBD: 5 Jun 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON; GOLD; ION IMPLANTATION; VACANCIES; CRYSTAL DEFECTS; MEV RANGE 01-10; INTERSTITIALS; CALIBRATION; EXPERIMENTAL DATA

Citation Formats

Kalyanaraman, R., Haynes, T. E., Venezia, V. C., Jacobson, D. C., Gossmann, H.-J., and Rafferty, C. S. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling. United States: N. p., 2000. Web. doi:10.1063/1.126653.
Kalyanaraman, R., Haynes, T. E., Venezia, V. C., Jacobson, D. C., Gossmann, H.-J., & Rafferty, C. S. Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling. United States. doi:10.1063/1.126653.
Kalyanaraman, R., Haynes, T. E., Venezia, V. C., Jacobson, D. C., Gossmann, H.-J., and Rafferty, C. S. Mon . "Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling". United States. doi:10.1063/1.126653.
@article{osti_20216505,
title = {Quantification of excess vacancy defects from high-energy ion implantation in Si by Au labeling},
author = {Kalyanaraman, R. and Haynes, T. E. and Venezia, V. C. and Jacobson, D. C. and Gossmann, H.-J. and Rafferty, C. S.},
abstractNote = {It has been shown recently that Au labeling [V. C. Venezia, D. J. Eaglesham, T. E. Haynes, A. Agarwal, D. C. Jacobson, H.-J. Gossmann, and F. H. Baumann, Appl. Phys. Lett. 73, 2980 (1998)] can be used to profile vacancy-type defects located near half the projected range ((1/2) R{sub p}) in MeV-implanted Si. In this letter, we have determined the ratio of vacancies annihilated to Au atoms trapped (calibration factor ''k'') for the Au-labeling technique. The calibration experiment consisted of three steps: (1) a 2 MeV Si{sup +} implant into Si(100) followed by annealing at 815 degree sign C to form stable excess vacancy defects; (2) controlled injection of interstitials in the (1/2) R{sub p} region of the above implant via 600 keV Si{sup +} ions followed by annealing to dissolve the {l_brace}311{r_brace} defects; and (3) Au labeling. The reduction in Au concentration in the near-surface region (0.1-1.6 {mu}m) with increasing interstitial injection provides the most direct evidence so far that Au labeling detects the vacancy-type defects. By correlating this reduction in Au with the known number of interstitials injected, it was determined that k=1.2{+-}0.2 vacancies per trapped Au atom. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126653},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 23,
volume = 76,
place = {United States},
year = {2000},
month = {6}
}