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Title: Complete surface exfoliation of 4H-SiC by H{sup +}- and Si{sup +}-coimplantation

Abstract

Implantation of 4H-SiC with {sup 1}H{sup +} and {sup 28}Si{sup +} ions followed by annealing is shown to result in complete ejection or exfoliation of the implanted layer. This is in contrast to H{sup +}-only implantation where only partial exfoliation of the surface can be achieved. The mechanisms of this process and its dependence on implantation conditions are discussed. It is shown that amorphization of the surface region during Si{sup +} irradiation is a necessary condition to produce this effect, and that it depends critically upon the thickness of the amorphous layer. Stress, induced by bulk recrystallization of the amorphized layer, acts as an additional driving force for H{sup +} induced exfoliation causing the surface layer to separate completely at a depth near the end-of-range of the H{sup +} ions. The morphologies of the newly exposed surfaces are studied by profilometry measurements and atomic force microscopy. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [1];  [3];  [1]
  1. Department of Physics and Astronomy, Vanderbilt University, Nashville, Tennessee 37235 (United States)
  2. (United States)
  3. Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37835 (United States)
Publication Date:
OSTI Identifier:
20216503
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 22; Other Information: PBD: 29 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; SILICON CARBIDES; ION IMPLANTATION; HYDROGEN IONS; SILICON IONS; AMORTIZATION; RADIATION EFFECTS; STRESSES; RECRYSTALLIZATION; KEV RANGE 100-1000; EXPERIMENTAL DATA

Citation Formats

Bennett, J. A., Holland, O. W., Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37835, Budde, M., Thomas, D. K., and Feldman, L. C. Complete surface exfoliation of 4H-SiC by H{sup +}- and Si{sup +}-coimplantation. United States: N. p., 2000. Web. doi:10.1063/1.126640.
Bennett, J. A., Holland, O. W., Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37835, Budde, M., Thomas, D. K., & Feldman, L. C. Complete surface exfoliation of 4H-SiC by H{sup +}- and Si{sup +}-coimplantation. United States. doi:10.1063/1.126640.
Bennett, J. A., Holland, O. W., Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37835, Budde, M., Thomas, D. K., and Feldman, L. C. Mon . "Complete surface exfoliation of 4H-SiC by H{sup +}- and Si{sup +}-coimplantation". United States. doi:10.1063/1.126640.
@article{osti_20216503,
title = {Complete surface exfoliation of 4H-SiC by H{sup +}- and Si{sup +}-coimplantation},
author = {Bennett, J. A. and Holland, O. W. and Solid State Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37835 and Budde, M. and Thomas, D. K. and Feldman, L. C.},
abstractNote = {Implantation of 4H-SiC with {sup 1}H{sup +} and {sup 28}Si{sup +} ions followed by annealing is shown to result in complete ejection or exfoliation of the implanted layer. This is in contrast to H{sup +}-only implantation where only partial exfoliation of the surface can be achieved. The mechanisms of this process and its dependence on implantation conditions are discussed. It is shown that amorphization of the surface region during Si{sup +} irradiation is a necessary condition to produce this effect, and that it depends critically upon the thickness of the amorphous layer. Stress, induced by bulk recrystallization of the amorphized layer, acts as an additional driving force for H{sup +} induced exfoliation causing the surface layer to separate completely at a depth near the end-of-range of the H{sup +} ions. The morphologies of the newly exposed surfaces are studied by profilometry measurements and atomic force microscopy. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126640},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}