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Title: Nature of the fundamental band gap in GaN{sub x}P{sub 1-x} alloys

Abstract

The optical properties of GaN{sub x}P{sub 1-x} alloys (0.007{<=}x{<=}0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN{sub x}P{sub 1-x} at energy below the indirect {gamma}{sub V}-X{sub C} transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN{sub x}P{sub 1-x} indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the {gamma} conduction-band minimum. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [4];  [4]
  1. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  2. Materials Science Division, Lawrence Berkeley National Laboratory, Berkeley, California (United States)
  3. (United States)
  4. Department of Electrical and Computer Engineering, University of California at San Diego, La Jolla, California 92093 (United States)
Publication Date:
OSTI Identifier:
20216502
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 22; Other Information: PBD: 29 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; NITROGEN ADDITIONS; GALLIUM PHOSPHIDES; ENERGY GAP; ABSORPTION SPECTRA; MOLECULAR BEAM EPITAXY; ENERGY-LEVEL TRANSITIONS; DOPED MATERIALS; PHOTOLUMINESCENCE; EXPERIMENTAL DATA

Citation Formats

Shan, W., Walukiewicz, W., Yu, K. M., Wu, J., Ager, J. W. III, Haller, E. E., Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720, Xin, H. P., and Tu, C. W. Nature of the fundamental band gap in GaN{sub x}P{sub 1-x} alloys. United States: N. p., 2000. Web. doi:10.1063/1.126597.
Shan, W., Walukiewicz, W., Yu, K. M., Wu, J., Ager, J. W. III, Haller, E. E., Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720, Xin, H. P., & Tu, C. W. Nature of the fundamental band gap in GaN{sub x}P{sub 1-x} alloys. United States. doi:10.1063/1.126597.
Shan, W., Walukiewicz, W., Yu, K. M., Wu, J., Ager, J. W. III, Haller, E. E., Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720, Xin, H. P., and Tu, C. W. Mon . "Nature of the fundamental band gap in GaN{sub x}P{sub 1-x} alloys". United States. doi:10.1063/1.126597.
@article{osti_20216502,
title = {Nature of the fundamental band gap in GaN{sub x}P{sub 1-x} alloys},
author = {Shan, W. and Walukiewicz, W. and Yu, K. M. and Wu, J. and Ager, J. W. III and Haller, E. E. and Department of Materials Sciences and Mineral Engineering, University of California, Berkeley, California 94720 and Xin, H. P. and Tu, C. W.},
abstractNote = {The optical properties of GaN{sub x}P{sub 1-x} alloys (0.007{<=}x{<=}0.031) grown by gas-source molecular-beam epitaxy have been studied. An absorption edge appears in GaN{sub x}P{sub 1-x} at energy below the indirect {gamma}{sub V}-X{sub C} transition in GaP, and the absorption edge shifts to lower energy with increasing N concentration. Strong photomodulation signals associated with the absorption edges in GaN{sub x}P{sub 1-x} indicate that a direct fundamental optical transition is taking place, revealing that the fundamental band gap has changed from indirect to direct. This N-induced transformation from indirect to direct band gap is explained in terms of an interaction between the highly localized nitrogen states and the extended states at the {gamma} conduction-band minimum. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126597},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}