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Title: Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures

Abstract

We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 {mu}mx1.25 {mu}m, enhancement-mode p-channel metal-oxide-semiconductor transistors operated in strong inversion in their linear regimes with constant drain-current and gate-voltage bias, for temperatures ranging from 4.2 to 300 K. The switching rates for all RTSs observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature independent below 10 K. This response is consistent with a crossover from thermal activation to tunneling at low temperatures. Implications are discussed for models of change exchange between the Si and the near-interfacial SiO{sub 2}. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2]
  1. Department of Physics, Oberlin College, Oberlin, Ohio 44074 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185-1083 (United States)
Publication Date:
OSTI Identifier:
20216501
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 22; Other Information: PBD: 29 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; SILICON; TEMPERATURE DEPENDENCE; MOSFET; NOISE; EXPERIMENTAL DATA

Citation Formats

Scofield, John H., Borland, Nick, and Fleetwood, D. M. Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures. United States: N. p., 2000. Web. doi:10.1063/1.126596.
Scofield, John H., Borland, Nick, & Fleetwood, D. M. Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures. United States. doi:10.1063/1.126596.
Scofield, John H., Borland, Nick, and Fleetwood, D. M. Mon . "Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures". United States. doi:10.1063/1.126596.
@article{osti_20216501,
title = {Temperature-independent switching rates for a random telegraph signal in a silicon metal-oxide-semiconductor field-effect transistor at low temperatures},
author = {Scofield, John H. and Borland, Nick and Fleetwood, D. M.},
abstractNote = {We have observed discrete random telegraph signals (RTSs) in the drain voltages of three, nominally 1.25 {mu}mx1.25 {mu}m, enhancement-mode p-channel metal-oxide-semiconductor transistors operated in strong inversion in their linear regimes with constant drain-current and gate-voltage bias, for temperatures ranging from 4.2 to 300 K. The switching rates for all RTSs observed above 30 K were thermally activated. The switching rate for the only RTS observed below 30 K was thermally activated above 30 K but temperature independent below 10 K. This response is consistent with a crossover from thermal activation to tunneling at low temperatures. Implications are discussed for models of change exchange between the Si and the near-interfacial SiO{sub 2}. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126596},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 22,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}