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Title: Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition

Abstract

Metal-organic chemical vapor deposition was used to prepare Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) thin films on (001) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg {beta}-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO{sub 3} substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO{sub 3} was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO{sub 3}/SrTiO{sub 3} were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 {mu}C/cm{sup 2}. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1];  [2];  [3];  [4];  [5];  [6];  [6]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838 (United States)
  2. Department of Mechanical Engineering and Materials Science, Rice University, Houston, Texas 77005-1892 (United States)
  3. Chemistry Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  4. Department of Physics, Northern Illinois University, DeKalb, Illinois 60115 (United States)
  5. (United States)
  6. Department of Mechanical Engineering and Materials Science, Duke University, Durham, North Carolina 27708-0300 (United States)
Publication Date:
Research Org.:
Argonne National Laboratory (ANL), Argonne, IL
OSTI Identifier:
20216498
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 21; Other Information: PBD: 22 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; LEAD OXIDES; MAGNESIUM OXIDES; NIOBIUM OXIDES; THIN FILMS; CHEMICAL VAPOR DEPOSITION; EPITAXY; GRAIN ORIENTATION; X-RAY DIFFRACTION; DIELECTRIC TENSOR; POLARIZATION; FERROELECTRIC MATERIALS; EXPERIMENTAL DATA

Citation Formats

Bai, G. R., Streiffer, S. K., Baumann, P. K., Auciello, O., Ghosh, K., Stemmer, S., Munkholm, A., Thompson, Carol, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838, Rao, R. A., and Eom, C. B. Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition. United States: N. p., 2000. Web. doi:10.1063/1.126538.
Bai, G. R., Streiffer, S. K., Baumann, P. K., Auciello, O., Ghosh, K., Stemmer, S., Munkholm, A., Thompson, Carol, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838, Rao, R. A., & Eom, C. B. Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition. United States. doi:10.1063/1.126538.
Bai, G. R., Streiffer, S. K., Baumann, P. K., Auciello, O., Ghosh, K., Stemmer, S., Munkholm, A., Thompson, Carol, Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838, Rao, R. A., and Eom, C. B. Mon . "Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition". United States. doi:10.1063/1.126538.
@article{osti_20216498,
title = {Epitaxial Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} thin films synthesized by metal-organic chemical vapor deposition},
author = {Bai, G. R. and Streiffer, S. K. and Baumann, P. K. and Auciello, O. and Ghosh, K. and Stemmer, S. and Munkholm, A. and Thompson, Carol and Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439-4838 and Rao, R. A. and Eom, C. B.},
abstractNote = {Metal-organic chemical vapor deposition was used to prepare Pb(Mg{sub 1/3}Nb{sub 2/3})O{sub 3} (PMN) thin films on (001) SrTiO{sub 3} and SrRuO{sub 3}/SrTiO{sub 3} substrates, using solid Mg {beta}-diketonate as the Mg precursor. Parameters including the precursor ratio in the vapor phase, growth temperature, growth rate, and reaction pressure in the reactor chamber were varied in order to determine suitable growth conditions for producing phase-pure, epitaxial PMN films. A cube-on-cube orientation relationship between the thin film and the SrTiO{sub 3} substrate was found, with a (001) rocking curve width of 0.1 degree sign , and in-plane rocking-curve width of 0.8 degree sign . The root-mean-square surface roughness of a 200-nm-thick film on SrTiO{sub 3} was 2 to 3 nm as measured by scanning probe microscopy. The zero-bias dielectric constant and loss measured at room temperature and 10 kHz for a 200-nm-thick film on SrRuO{sub 3}/SrTiO{sub 3} were approximately 1100 and 2%, respectively. The remnant polarization for this film was 16 {mu}C/cm{sup 2}. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126538},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}