skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Well-width dependence of the quantum efficiencies of GaN/Al{sub x}Ga{sub 1-x}N multiple quantum wells

Abstract

A set of GaN/Al{sub x}Ga{sub 1-x}N(x{approx_equal}0.2) multiple quantum wells (MQWs) with well widths, L{sub w}, varying from 6 to 48 Aa has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminescence spectroscopy has been employed to probe the well-width dependence of the quantum efficiencies (QE) of these MQWs. Our results have shown that these GaN/AlGaN MQW structures exhibit negligibly small piezoelectric effects and hence enhanced QE. Furthermore, GaN/Al{sub x}Ga{sub 1-x}N MQWs with L{sub w} between 12 and 42 Aa were observed to provide the highest QE, which can be attributed to the reduced nonradiative recombination rate as well as the improved quantum-well quality. The decreased QE in GaN/Al{sub x}Ga{sub 1-x}N MQWs with L{sub w}<12 Aa is due to the enhanced carrier leakage to the underlying GaN epilayers, while the decreased QE in MQWs with L{sub w}>42 Aa is associated with an increased nonradiative recombination rate as L{sub w} approaching the critical thickness of MQWs. The implications of our results on device applications are also discussed. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1]
  1. Department of Physics, Kansas State University, Manhattan, Kansas 66506-2601 (United States)
Publication Date:
OSTI Identifier:
20216496
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 21; Other Information: PBD: 22 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; ALUMINIUM NITRIDES; QUANTUM EFFICIENCY; CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; PIEZOELECTRICITY; RECOMMENDATIONS; HETEROJUNCTIONS; EXPERIMENTAL DATA

Citation Formats

Zeng, K. C., Li, J., Lin, J. Y., and Jiang, H. X. Well-width dependence of the quantum efficiencies of GaN/Al{sub x}Ga{sub 1-x}N multiple quantum wells. United States: N. p., 2000. Web. doi:10.1063/1.126572.
Zeng, K. C., Li, J., Lin, J. Y., & Jiang, H. X. Well-width dependence of the quantum efficiencies of GaN/Al{sub x}Ga{sub 1-x}N multiple quantum wells. United States. doi:10.1063/1.126572.
Zeng, K. C., Li, J., Lin, J. Y., and Jiang, H. X. Mon . "Well-width dependence of the quantum efficiencies of GaN/Al{sub x}Ga{sub 1-x}N multiple quantum wells". United States. doi:10.1063/1.126572.
@article{osti_20216496,
title = {Well-width dependence of the quantum efficiencies of GaN/Al{sub x}Ga{sub 1-x}N multiple quantum wells},
author = {Zeng, K. C. and Li, J. and Lin, J. Y. and Jiang, H. X.},
abstractNote = {A set of GaN/Al{sub x}Ga{sub 1-x}N(x{approx_equal}0.2) multiple quantum wells (MQWs) with well widths, L{sub w}, varying from 6 to 48 Aa has been grown by metalorganic chemical vapor deposition under the optimal GaN-like growth conditions. Picosecond time-resolved photoluminescence spectroscopy has been employed to probe the well-width dependence of the quantum efficiencies (QE) of these MQWs. Our results have shown that these GaN/AlGaN MQW structures exhibit negligibly small piezoelectric effects and hence enhanced QE. Furthermore, GaN/Al{sub x}Ga{sub 1-x}N MQWs with L{sub w} between 12 and 42 Aa were observed to provide the highest QE, which can be attributed to the reduced nonradiative recombination rate as well as the improved quantum-well quality. The decreased QE in GaN/Al{sub x}Ga{sub 1-x}N MQWs with L{sub w}<12 Aa is due to the enhanced carrier leakage to the underlying GaN epilayers, while the decreased QE in MQWs with L{sub w}>42 Aa is associated with an increased nonradiative recombination rate as L{sub w} approaching the critical thickness of MQWs. The implications of our results on device applications are also discussed. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126572},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}