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Title: Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth

Abstract

Partially coalesced GaN pyramidal structures are formed by metal-organic chemical vapor deposition using the epitaxial lateral overgrowth method. Spatially resolved optical characterization of these structures has been carried out using cathodoluminescence (CL) microscopy and spectroscopy. The coalesced region exhibits much stronger and more uniform luminescence than other regions of the sample. In addition, the emission from the coalesced region is blue-shifted, while that from the sidewalls is red-shifted, relative to broad area grown samples. The peak shift mechanism is discussed based on the CL temperature and power dependence and analysis of the confocal Raman scattering. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2];  [3]
  1. Department of Chemistry, Materials Research Laboratory and Beckman Institute, University of Illinois at Urbana-Champaign, 600 S. Mathews, Urbana, Illinois 61801 (United States)
  2. Materials Research Laboratory, University of Illinois at Urbana-Champaign, 104 S. Goodwin, Urbana, Illinois 61801 (United States)
  3. Department of Electrical and Computer Engineering and Microelectronics Laboratory, University of Illinois at Urbana-Champaign, 1406 W. Green, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
20216495
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 21; Other Information: PBD: 22 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GALLIUM NITRIDES; COALESCENCE; CATHODOLUMINESCENCE; MICROSCOPY; GROWTH; CHEMICAL VAPOR DEPOSITION; SPECTRAL SHIFT; RAMAN SPECTRA; EXPERIMENTAL DATA

Citation Formats

Li, X., Bohn, P. W., Kim, Jeongyong, White, J. O., and Coleman, J. J. Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth. United States: N. p., 2000. Web. doi:10.1063/1.126569.
Li, X., Bohn, P. W., Kim, Jeongyong, White, J. O., & Coleman, J. J. Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth. United States. doi:10.1063/1.126569.
Li, X., Bohn, P. W., Kim, Jeongyong, White, J. O., and Coleman, J. J. Mon . "Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth". United States. doi:10.1063/1.126569.
@article{osti_20216495,
title = {Spatially resolved band-edge emission from partially coalesced GaN pyramids prepared by epitaxial lateral overgrowth},
author = {Li, X. and Bohn, P. W. and Kim, Jeongyong and White, J. O. and Coleman, J. J.},
abstractNote = {Partially coalesced GaN pyramidal structures are formed by metal-organic chemical vapor deposition using the epitaxial lateral overgrowth method. Spatially resolved optical characterization of these structures has been carried out using cathodoluminescence (CL) microscopy and spectroscopy. The coalesced region exhibits much stronger and more uniform luminescence than other regions of the sample. In addition, the emission from the coalesced region is blue-shifted, while that from the sidewalls is red-shifted, relative to broad area grown samples. The peak shift mechanism is discussed based on the CL temperature and power dependence and analysis of the confocal Raman scattering. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126569},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 21,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}