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Title: Noncommutative band offset at {alpha}-Cr{sub 2}O{sub 3}/{alpha}-Fe{sub 2}O{sub 3}(0001) heterojunctions

Abstract

We have measured the valence-band discontinuity at artificially structured, epitaxial heterojunctions of {alpha}-Cr{sub 2}O{sub 3}(0001) and {alpha}-Fe{sub 2}O{sub 3}(0001). Layered film structures of these two materials maintain the in-plane lattice parameter of {alpha}-Fe{sub 2}O{sub 3}(0001). Thus the {alpha}-Cr{sub 2}O{sub 3}(0001) layers are under a 2.4% tensile stress. A partial inward relaxation in {alpha}-Cr{sub 2}O{sub 3}(0001) layers along the c axis is also observed, revealing the presence of artifically structured epilayers with a c/a ratio of 2.70, compared to 2.78 in bulk {alpha}-Cr{sub 2}O{sub 3}(0001). The valence-band offsets are -0.3{+-}0.1 and +0.7{+-}0.1 eV when the top layer is Fe{sub 2}O{sub 3} and Cr{sub 2}O{sub 3}, respectively. The noncommutativity in the band offset is not due to either anisotropic strain or quantum confinement, but rather appears to be due to a growth-sequence-dependent interface dipole. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [1]
  1. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352 (United States)
Publication Date:
OSTI Identifier:
20216429
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 19; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CHROMIUM OXIDES; IRON OXIDES; SUPERLATTICES; ENERGY GAP; ELECTRONIC STRUCTURE; HETEROJUNCTIONS; LATTICE PARAMETERS; STRESSES; EXPERIMENTAL DATA

Citation Formats

Chambers, S. A., Liang, Y., and Gao, Y. Noncommutative band offset at {alpha}-Cr{sub 2}O{sub 3}/{alpha}-Fe{sub 2}O{sub 3}(0001) heterojunctions. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.13223.
Chambers, S. A., Liang, Y., & Gao, Y. Noncommutative band offset at {alpha}-Cr{sub 2}O{sub 3}/{alpha}-Fe{sub 2}O{sub 3}(0001) heterojunctions. United States. doi:10.1103/PhysRevB.61.13223.
Chambers, S. A., Liang, Y., and Gao, Y. Mon . "Noncommutative band offset at {alpha}-Cr{sub 2}O{sub 3}/{alpha}-Fe{sub 2}O{sub 3}(0001) heterojunctions". United States. doi:10.1103/PhysRevB.61.13223.
@article{osti_20216429,
title = {Noncommutative band offset at {alpha}-Cr{sub 2}O{sub 3}/{alpha}-Fe{sub 2}O{sub 3}(0001) heterojunctions},
author = {Chambers, S. A. and Liang, Y. and Gao, Y.},
abstractNote = {We have measured the valence-band discontinuity at artificially structured, epitaxial heterojunctions of {alpha}-Cr{sub 2}O{sub 3}(0001) and {alpha}-Fe{sub 2}O{sub 3}(0001). Layered film structures of these two materials maintain the in-plane lattice parameter of {alpha}-Fe{sub 2}O{sub 3}(0001). Thus the {alpha}-Cr{sub 2}O{sub 3}(0001) layers are under a 2.4% tensile stress. A partial inward relaxation in {alpha}-Cr{sub 2}O{sub 3}(0001) layers along the c axis is also observed, revealing the presence of artifically structured epilayers with a c/a ratio of 2.70, compared to 2.78 in bulk {alpha}-Cr{sub 2}O{sub 3}(0001). The valence-band offsets are -0.3{+-}0.1 and +0.7{+-}0.1 eV when the top layer is Fe{sub 2}O{sub 3} and Cr{sub 2}O{sub 3}, respectively. The noncommutativity in the band offset is not due to either anisotropic strain or quantum confinement, but rather appears to be due to a growth-sequence-dependent interface dipole. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.13223},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 19,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}