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Title: Ion-dose-dependent microstructure in amorphous Ge

Abstract

Implantation-induced, microstructural modifications including increased bond length and non-Gaussian static disorder have been measured in amorphous Ge using extended x-ray absorption fine-structure spectroscopy. The evolution of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects. (c) 2000 The American Physical Society.

Authors:
 [1];  [1];  [2];  [3];  [4];  [5];  [5]
  1. Department of Electronic Materials Engineering, Australian National University, Canberra ACT 0200, (Australia)
  2. Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94701 (United States)
  3. Australian Nuclear Science and Technology Organization, Menai, (Australia)
  4. Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse, Centre National de la Recherche Scientifique, 91405 Orsay, (France)
  5. Institute of Physics and Astronomy, Aarhus University, Aarhus, (Denmark)
Publication Date:
OSTI Identifier:
20216421
Resource Type:
Journal Article
Journal Name:
Physical Review. B, Condensed Matter and Materials Physics
Additional Journal Information:
Journal Volume: 61; Journal Issue: 19; Other Information: PBD: 15 May 2000; Journal ID: ISSN 1098-0121
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; GERMANIUM; AMORPHOUS STATE; MICROSTRUCTURE; ION IMPLANTATION; X-RAY SPECTROSCOPY; FINE STRUCTURE; INTERATOMIC DISTANCES; POINT DEFECTS; THIN FILMS; EXPERIMENTAL DATA

Citation Formats

Ridgway, M. C., Glover, C. J., Yu, K. M., Foran, G. J., Clerc, C., Hansen, J. L., and Larsen, A. Nylandsted. Ion-dose-dependent microstructure in amorphous Ge. United States: N. p., 2000. Web. doi:10.1103/PhysRevB.61.12586.
Ridgway, M. C., Glover, C. J., Yu, K. M., Foran, G. J., Clerc, C., Hansen, J. L., & Larsen, A. Nylandsted. Ion-dose-dependent microstructure in amorphous Ge. United States. doi:10.1103/PhysRevB.61.12586.
Ridgway, M. C., Glover, C. J., Yu, K. M., Foran, G. J., Clerc, C., Hansen, J. L., and Larsen, A. Nylandsted. Mon . "Ion-dose-dependent microstructure in amorphous Ge". United States. doi:10.1103/PhysRevB.61.12586.
@article{osti_20216421,
title = {Ion-dose-dependent microstructure in amorphous Ge},
author = {Ridgway, M. C. and Glover, C. J. and Yu, K. M. and Foran, G. J. and Clerc, C. and Hansen, J. L. and Larsen, A. Nylandsted},
abstractNote = {Implantation-induced, microstructural modifications including increased bond length and non-Gaussian static disorder have been measured in amorphous Ge using extended x-ray absorption fine-structure spectroscopy. The evolution of the amorphous phase interatomic distance distribution as functions of ion dose and implant temperature demonstrates the influence of implantation conditions on amorphous phase structure. Results are attributed to increased fractions of three- and fivefold coordinated atoms as a means of accommodating implantation-induced point defects. (c) 2000 The American Physical Society.},
doi = {10.1103/PhysRevB.61.12586},
journal = {Physical Review. B, Condensed Matter and Materials Physics},
issn = {1098-0121},
number = 19,
volume = 61,
place = {United States},
year = {2000},
month = {5}
}