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Title: Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants

Abstract

An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2]
  1. Sandia National Laboratories, P.O. Box 5800, MS-1083, Albuquerque, New Mexico 87185-1083 (United States)
  2. The Aerospace Corporation, P.O. Box 92957, M2-244, Los Angeles, California 90009-2957 (United States)
Publication Date:
OSTI Identifier:
20216374
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 87; Journal Issue: 11; Other Information: PBD: 1 Jun 2000; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
46 INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; CAPACITORS; MOS TRANSISTORS; HYDROGEN; SILICON; DOPED MATERIALS; BORON ADDITIONS; RADIATION EFFECTS; CHARGE STATES; GAMMA RADIATION; EXPERIMENTAL DATA

Citation Formats

Witczak, Steven C., Winokur, Peter S., Lacoe, Ronald C., and Mayer, Donald C. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants. United States: N. p., 2000. Web. doi:10.1063/1.373522.
Witczak, Steven C., Winokur, Peter S., Lacoe, Ronald C., & Mayer, Donald C. Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants. United States. doi:10.1063/1.373522.
Witczak, Steven C., Winokur, Peter S., Lacoe, Ronald C., and Mayer, Donald C. Thu . "Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants". United States. doi:10.1063/1.373522.
@article{osti_20216374,
title = {Charge separation technique for metal-oxide-silicon capacitors in the presence of hydrogen deactivated dopants},
author = {Witczak, Steven C. and Winokur, Peter S. and Lacoe, Ronald C. and Mayer, Donald C.},
abstractNote = {An improved charge separation technique for metal-oxide-silicon (MOS) capacitors is presented which accounts for the deactivation of substrate dopants by hydrogen at elevated irradiation temperatures or small irradiation biases. Using high-frequency capacitance-voltage measurements, radiation-induced inversion voltage shifts are separated into components due to oxide trapped charge, interface traps, and deactivated dopants, where the latter is computed from a reduction in Si capacitance. In the limit of no radiation-induced dopant deactivation, this approach reduces to the standard midgap charge separation technique used widely for the analysis of room-temperature irradiations. The technique is demonstrated on a p-type MOS capacitor irradiated with {sup 60}Co {gamma} rays at 100 degree sign C and zero bias, where the dopant deactivation is significant.(c) 2000 American Institute of Physics.},
doi = {10.1063/1.373522},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 11,
volume = 87,
place = {United States},
year = {2000},
month = {6}
}