Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

Journal Article · Mon May 15 00:00:00 EDT 2000 · Applied Physics Letters

DOI:https://doi.org/10.1063/1.126524· OSTI ID:20216363

Zhang, A P ^[1]; Dang, G T ^[1]; Ren, F ^[1]; Han, J ^[2]; Baca, A G ^[2]; Shul, R J ^[2]; Cho, H ^[3]; Monier, C ^[3]; Cao, X A ^[3]; Abernathy, C R ^[3]

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1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)

AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 degree sign C. In the common-base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of {approx}50 kW cm-2. The dc current gain was in the range 20-25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. (c) 2000 American Institute of Physics.

• OSTI ID: 20216363
• Journal Information: Applied Physics Letters, Vol. 76, Issue 20; Other Information: PBD: 15 May 2000; ISSN 0003-6951
• Country of Publication: United States
• Language: English

Related Subjects

42 ENGINEERING
JUNCTION TRANSISTORS
ALUMINIUM NITRIDES
GALLIUM NITRIDES
FABRICATION
ETCHING
ELECTRIC CURRENTS
EXPERIMENTAL DATA