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Title: Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors

Abstract

AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 degree sign C. In the common-base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of {approx}50 kW cm-2. The dc current gain was in the range 20-25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [2];  [2];  [2];  [3];  [3];  [3];  [4]
  1. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  2. Sandia National Laboratories, Albuquerque, New Mexico 87185 (United States)
  3. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States)
  4. Department of Materials Science and Engineering, University of Florida, Gainesville, Florida 32611 (United States) (and others)
Publication Date:
OSTI Identifier:
20216363
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; JUNCTION TRANSISTORS; ALUMINIUM NITRIDES; GALLIUM NITRIDES; FABRICATION; ETCHING; ELECTRIC CURRENTS; EXPERIMENTAL DATA

Citation Formats

Zhang, A. P., Dang, G. T., Ren, F., Han, J., Baca, A. G., Shul, R. J., Cho, H., Monier, C., Cao, X. A., and Abernathy, C. R. Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors. United States: N. p., 2000. Web. doi:10.1063/1.126524.
Zhang, A. P., Dang, G. T., Ren, F., Han, J., Baca, A. G., Shul, R. J., Cho, H., Monier, C., Cao, X. A., & Abernathy, C. R. Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors. United States. doi:10.1063/1.126524.
Zhang, A. P., Dang, G. T., Ren, F., Han, J., Baca, A. G., Shul, R. J., Cho, H., Monier, C., Cao, X. A., and Abernathy, C. R. Mon . "Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors". United States. doi:10.1063/1.126524.
@article{osti_20216363,
title = {Direct-current characteristics of pnp AlGaN/GaN heterojunction bipolar transistors},
author = {Zhang, A. P. and Dang, G. T. and Ren, F. and Han, J. and Baca, A. G. and Shul, R. J. and Cho, H. and Monier, C. and Cao, X. A. and Abernathy, C. R.},
abstractNote = {AlGaN/GaN pnp heterojunction bipolar transistors were fabricated using a low-damage dry-etch process, and the dc characteristics measured up to 250 degree sign C. In the common-base mode, the collector current was approximately equal to the emitter current under all conditions. Although not optimized for power operations, the devices were tested up to power densities of {approx}50 kW cm-2. The dc current gain was in the range 20-25 at room temperature. The pnp configuration avoids the problem of high base sheet resistance encountered with npn-AlGaN/GaN devices. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126524},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}