skip to main content
OSTI.GOV title logo U.S. Department of Energy
Office of Scientific and Technical Information

Title: Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}

Abstract

Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [2];  [3]
  1. Department of Materials Science and Engineering, The Pennsylvania State University, University Park, Pennsylvania 16803-6602 (United States)
  2. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
  3. Materials Science and Technology Division, Los Alamos National Laboratory, Los Alamos, New Mexico 87545 (United States)
Publication Date:
OSTI Identifier:
20216362
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; EPITAXY; STRONTIUM COMPOUNDS; BISMUTH COMPOUNDS; NIOBATES; TITANATES; X-RAY DIFFRACTION; TRANSMISSION ELECTRON MICROSCOPY; STRUCTURAL CHEMICAL ANALYSIS; POLARIZATION; PEROVSKITES; FERROELECTRIC MATERIALS; EXPERIMENTAL DATA

Citation Formats

Lettieri, J., Zurbuchen, M. A., Jia, Y., Schlom, D. G., Streiffer, S. K., and Hawley, M. E. Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}. United States: N. p., 2000. Web. doi:10.1063/1.126522.
Lettieri, J., Zurbuchen, M. A., Jia, Y., Schlom, D. G., Streiffer, S. K., & Hawley, M. E. Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}. United States. doi:10.1063/1.126522.
Lettieri, J., Zurbuchen, M. A., Jia, Y., Schlom, D. G., Streiffer, S. K., and Hawley, M. E. Mon . "Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}". United States. doi:10.1063/1.126522.
@article{osti_20216362,
title = {Epitaxial growth of non-c-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} on (111) SrTiO{sub 3}},
author = {Lettieri, J. and Zurbuchen, M. A. and Jia, Y. and Schlom, D. G. and Streiffer, S. K. and Hawley, M. E.},
abstractNote = {Epitaxial SrBi{sub 2}Nb{sub 2}O{sub 9} thin films have been grown with a (103) orientation on (111) SrTiO{sub 3} substrates by pulsed-laser deposition. Four-circle x-ray diffraction and transmission electron microscopy reveal nearly phase-pure epitaxial films. Epitaxial (111) SrRuO{sub 3} electrodes enabled the electrical properties of these (103)-oriented SrBi{sub 2}Nb{sub 2}O{sub 9} films to be measured. The low-field relative permittivity was 185, the remanent polarization was 15.7 {mu}C/cm{sup 2}, and the dielectric loss was 2.5% for a 0.5-{mu}m-thick film. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126522},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}