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Title: Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics

Abstract

The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto danglingmore » bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.« less

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Department of Materials Science, the Materials Research Laboratory, and the Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
Publication Date:
OSTI Identifier:
20216359
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 20; Other Information: PBD: 15 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; SILICON; GROWTH FACTORS; TEMPERATURE DEPENDENCE; CHEMICAL REACTIONS; CHEMISORPTION; HYDROGEN; DESORPTION; DISSOCIATION; EXPERIMENTAL DATA

Citation Formats

Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., and Greene, J. E. Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics. United States: N. p., 2000. Web. doi:10.1063/1.126495.
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., & Greene, J. E. Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics. United States. doi:10.1063/1.126495.
Taylor, N., Kim, H., Desjardins, P., Foo, Y. L., and Greene, J. E. Mon . "Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics". United States. doi:10.1063/1.126495.
@article{osti_20216359,
title = {Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics},
author = {Taylor, N. and Kim, H. and Desjardins, P. and Foo, Y. L. and Greene, J. E.},
abstractNote = {The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto dangling bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126495},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 20,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}