Si(011)16x2 gas-source molecular beam epitaxy: Growth kinetics
- Department of Materials Science, the Materials Research Laboratory, and the Coordinated Science Laboratory, University of Illinois, Urbana, Illinois 61801 (United States)
The growth rates R{sub Si} of Si layers deposited on Si(011)''16x2'' by gas-source molecular beam epitaxy from Si{sub 2}H{sub 6} were determined as a function of temperature T{sub s} (400-975 degree sign C) and Si{sub 2}H{sub 6} flux J{sub Si{sub 2}}{sub H{sub 6}}(5.0x10{sup 15}-9.0x10{sup 16} cm{sup -2} s{sup -1}). R{sub Si} ranges from 0.0015 {mu}m h-1 at T{sub s}=400 degree sign C to 0.415 {mu}m h-1 at T{sub s}=975 degree sign C with J{sub Si{sub 2}}{sub H{sub 6}}=2.2x10{sup 16} cm{sup -2} s{sup -1}. In the surface-reaction-limited regime at T{sub s}<725 degree sign C, R{sub Si} initially exhibits an exponential decrease with 1/T{sub s}, then decreases at a slower rate at T{sub s}{<=}550 degree sign C as an additional deposition pathway becomes operative. In the impingement-flux-limited regime, 725{<=}T{sub s}{<=}900 degree sign C, R{sub Si} is independent of T{sub s} but increases linearly with J{sub Si{sub 2}}{sub H{sub 6}}. At T{sub s}>900 degree sign C, R{sub Si}(T{sub s}) increases with T{sub s} due to surface roughening. Overall, R{sub Si}(J{sub Si{sub 2}}{sub H{sub 6}},T{sub s}) is well described at T{sub s}{<=}900 degree sign C by a kinetic model incorporating two competing film growth mechanisms: (1) dissociative chemisorption of Si{sub 2}H{sub 6} onto dangling bonds followed by fast surface dissociation steps and second-order H{sub 2} desorption from the surface monohydride phase; and (2) Si{sub 2}H{sub 6} insertion into Si-H surface bonds followed by second-order desorption of SiH{sub 4}. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216359
- Journal Information:
- Applied Physics Letters, Vol. 76, Issue 20; Other Information: PBD: 15 May 2000; ISSN 0003-6951
- Country of Publication:
- United States
- Language:
- English
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