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Title: Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films

Abstract

Highly c-axis oriented Co{sub 95}Cr{sub 5} films with perpendicular anisotropy were grown epitaxially on Si (111), using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction, and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111){sub Si}(parallel sign)(111){sub Ag}(parallel sign)(0001){sub CoCr};[2(bar sign)20]{sub Si}(parallel sign)[2(bar sign)20]{sub Ag}(parallel sign)[1(bar sign)100]{sub CoCr}. Magnetic domain structures of these films were observed as a function of thickness; t, in the range, 200 Aa<t<700 Aa using a wedge-shaped sample, and temperature-dependent measurements were carried out by in situ resistance heating. Thickness was measured locally by electron energy loss spectroscopy. At room temperature, below a critical thickness, t{sub c}{approx_equal}300 Aa, the magnetization was found to be effectively in-plane of the film, and above t{sub c} a regular, stripe-like domain pattern with a significant, alternating in sign, perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in situ heating up to 350 degree sign C. The critical transition thickness, t{sub c}, which is a function of K{sub u} and magnetostatic energy, wasmore » found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increase gradually with thickness; L=90 nm at t=300 Aa, and L=110 nm at t=700 Aa. (c) 2000 American Institute of Physics.« less

Authors:
 [1];  [1];  [1];  [1]
  1. Material Science Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
20216269
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 87; Journal Issue: 9; Other Information: PBD: 1 May 2000; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; COBALT ALLOYS; CHROMIUM ALLOYS; THIN FILMS; SPIN ORIENTATION; DOMAIN STRUCTURE; TEMPERATURE DEPENDENCE; PHYSICAL VAPOR DEPOSITION; THICKNESS; MAGNETIZATION; EXPERIMENTAL DATA

Citation Formats

Kusinski, Greg J., Krishnan, Kannan M., Thomas, Gareth, and Nelson, E. C. Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films. United States: N. p., 2000. Web. doi:10.1063/1.372711.
Kusinski, Greg J., Krishnan, Kannan M., Thomas, Gareth, & Nelson, E. C. Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films. United States. doi:10.1063/1.372711.
Kusinski, Greg J., Krishnan, Kannan M., Thomas, Gareth, and Nelson, E. C. Mon . "Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films". United States. doi:10.1063/1.372711.
@article{osti_20216269,
title = {Domain structures and temperature-dependent spin reorientation transitions in c-axis oriented Co-Cr thin films},
author = {Kusinski, Greg J. and Krishnan, Kannan M. and Thomas, Gareth and Nelson, E. C.},
abstractNote = {Highly c-axis oriented Co{sub 95}Cr{sub 5} films with perpendicular anisotropy were grown epitaxially on Si (111), using an Ag seed layer, by physical vapor deposition. Films were characterized by x-ray diffraction, transmission electron microscopy (TEM), selected area electron diffraction, and Lorentz microscopy in a TEM. The following epitaxial relationship was confirmed: (111){sub Si}(parallel sign)(111){sub Ag}(parallel sign)(0001){sub CoCr};[2(bar sign)20]{sub Si}(parallel sign)[2(bar sign)20]{sub Ag}(parallel sign)[1(bar sign)100]{sub CoCr}. Magnetic domain structures of these films were observed as a function of thickness; t, in the range, 200 Aa<t<700 Aa using a wedge-shaped sample, and temperature-dependent measurements were carried out by in situ resistance heating. Thickness was measured locally by electron energy loss spectroscopy. At room temperature, below a critical thickness, t{sub c}{approx_equal}300 Aa, the magnetization was found to be effectively in-plane of the film, and above t{sub c} a regular, stripe-like domain pattern with a significant, alternating in sign, perpendicular component was observed. The spin reorientation transitions of the stripe domains to the in-plane magnetization were studied dynamically by observing the domains as a function of temperature by in situ heating up to 350 degree sign C. The critical transition thickness, t{sub c}, which is a function of K{sub u} and magnetostatic energy, was found to increase with increasing temperature. The stripe-domain period, L observed at room temperature was found to increase gradually with thickness; L=90 nm at t=300 Aa, and L=110 nm at t=700 Aa. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.372711},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 87,
place = {United States},
year = {2000},
month = {5}
}