Voltage controlled spintronic devices for logic applications
Journal Article
·
· Journal of Applied Physics
- Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistorlike concepts and reprogrammable logic gates based on VCR elements. (c) 2000 American Institute of Physics.
- OSTI ID:
- 20216231
- Journal Information:
- Journal of Applied Physics, Vol. 87, Issue 9; Other Information: PBD: 1 May 2000; ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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