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Title: Voltage controlled spintronic devices for logic applications

Abstract

We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistorlike concepts and reprogrammable logic gates based on VCR elements. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1]
  1. Materials Science Division, Argonne National Laboratory, Argonne, Illinois 60439 (United States)
Publication Date:
OSTI Identifier:
20216231
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 87; Journal Issue: 9; Other Information: PBD: 1 May 2000; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; FERROMAGNETIC MATERIALS; THIN FILMS; LOGIC CIRCUITS; MAGNETIZATION; VOLTAGE DROP; LAYERS; SPIN; THEORETICAL DATA

Citation Formats

You, Chun-Yeol, and Bader, S. D. Voltage controlled spintronic devices for logic applications. United States: N. p., 2000. Web. doi:10.1063/1.373299.
You, Chun-Yeol, & Bader, S. D. Voltage controlled spintronic devices for logic applications. United States. doi:10.1063/1.373299.
You, Chun-Yeol, and Bader, S. D. Mon . "Voltage controlled spintronic devices for logic applications". United States. doi:10.1063/1.373299.
@article{osti_20216231,
title = {Voltage controlled spintronic devices for logic applications},
author = {You, Chun-Yeol and Bader, S. D.},
abstractNote = {We consider logic device concepts based on our previously proposed spintronics device element whose magnetization orientation is controlled by application of a bias voltage instead of a magnetic field. The basic building block is the voltage-controlled rotation (VCR) element that consists of a four-layer structure--two ferromagnetic layers separated by both nanometer-thick insulator and metallic spacer layers. The interlayer exchange coupling between the two ferromagnetic layers oscillates as a function of applied voltage. We illustrate transistorlike concepts and reprogrammable logic gates based on VCR elements. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.373299},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 87,
place = {United States},
year = {2000},
month = {5}
}