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Title: Influence of base pressure on FeMn exchange biased spin-valve films

Abstract

The influence of base pressure, P{sub b}, on physical properties of FeMn exchange biased spin-valve films was studied by varying P{sub b} over two decades from 3x10{sup -8} to 7x10{sup -6} Torr. Giant magnetoresistive value shows a slight increase with increasing P{sub b} until a large decrease occurs at P{sub b}>3.3x10{sup -6} Torr. Exchange bias field and blocking temperature remain constant in the base pressure range between 3x10{sup -8} and 5x10{sup -7} Torr before a large reduction appears. Our results indicate an upper limit for base pressure, {sup u}P{sub b}(approx =)5x10{sup -7} Torr, above which significant spin-valve performance modification and deterioration in the crystallographic texture begin as a result of the contamination both at the ferromagnetic/antiferromagnetic interface and in the bulk of FeMn layer. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [1];  [1];  [1]
  1. Lawrence Livermore National Laboratory, Livermore, California 94550 (United States)
Publication Date:
OSTI Identifier:
20216217
Resource Type:
Journal Article
Journal Name:
Journal of Applied Physics
Additional Journal Information:
Journal Volume: 87; Journal Issue: 9; Other Information: PBD: 1 May 2000; Journal ID: ISSN 0021-8979
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; THIN FILMS; IRON ADDITIONS; MANGANESE ALLOYS; MAGNETORESISTANCE; PRESSURE DEPENDENCE; TEXTURE; INTERFACES; ANTIFERROMAGNETIC MATERIALS; EXPERIMENTAL DATA

Citation Formats

Mao, M., Cerjan, C., Law, B., Grabner, F., and Vaidya, S. Influence of base pressure on FeMn exchange biased spin-valve films. United States: N. p., 2000. Web. doi:10.1063/1.373207.
Mao, M., Cerjan, C., Law, B., Grabner, F., & Vaidya, S. Influence of base pressure on FeMn exchange biased spin-valve films. United States. doi:10.1063/1.373207.
Mao, M., Cerjan, C., Law, B., Grabner, F., and Vaidya, S. Mon . "Influence of base pressure on FeMn exchange biased spin-valve films". United States. doi:10.1063/1.373207.
@article{osti_20216217,
title = {Influence of base pressure on FeMn exchange biased spin-valve films},
author = {Mao, M. and Cerjan, C. and Law, B. and Grabner, F. and Vaidya, S.},
abstractNote = {The influence of base pressure, P{sub b}, on physical properties of FeMn exchange biased spin-valve films was studied by varying P{sub b} over two decades from 3x10{sup -8} to 7x10{sup -6} Torr. Giant magnetoresistive value shows a slight increase with increasing P{sub b} until a large decrease occurs at P{sub b}>3.3x10{sup -6} Torr. Exchange bias field and blocking temperature remain constant in the base pressure range between 3x10{sup -8} and 5x10{sup -7} Torr before a large reduction appears. Our results indicate an upper limit for base pressure, {sup u}P{sub b}(approx =)5x10{sup -7} Torr, above which significant spin-valve performance modification and deterioration in the crystallographic texture begin as a result of the contamination both at the ferromagnetic/antiferromagnetic interface and in the bulk of FeMn layer. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.373207},
journal = {Journal of Applied Physics},
issn = {0021-8979},
number = 9,
volume = 87,
place = {United States},
year = {2000},
month = {5}
}