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Title: InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor

Abstract

We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower band gap energy (E{sub g}=1.2 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT. (c) 2000 American Institute of Physics.

Authors:
 [1];  [1];  [2];  [2];  [2];  [3];  [3]
  1. Sandia National Laboratories, Albuquerque, New Mexico 87123 (United States)
  2. Emcore Photovoltaics, Emcore Corporation, Albuquerque, New Mexico 87123 (United States)
  3. Department of Chemical Engineering, University of Florida, Gainesville, Florida 32611 (United States)
Publication Date:
OSTI Identifier:
20216186
Resource Type:
Journal Article
Journal Name:
Applied Physics Letters
Additional Journal Information:
Journal Volume: 76; Journal Issue: 19; Other Information: PBD: 8 May 2000; Journal ID: ISSN 0003-6951
Country of Publication:
United States
Language:
English
Subject:
42 ENGINEERING; GALLIUM ARSENIDES; ALUMINIUM ARSENIDES; INDIUM NITRIDES; JUNCTION TRANSISTORS; VAPOR PHASE EPITAXY; ENERGY GAP; EXPERIMENTAL DATA

Citation Formats

Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., and Ren, F. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor. United States: N. p., 2000. Web. doi:10.1063/1.126476.
Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., & Ren, F. InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor. United States. doi:10.1063/1.126476.
Chang, P. C., Baca, A. G., Li, N. Y., Sharps, P. R., Hou, H. Q., Laroche, J. R., and Ren, F. Mon . "InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor". United States. doi:10.1063/1.126476.
@article{osti_20216186,
title = {InGaAsN/AlGaAs P-n-p heterojunction bipolar transistor},
author = {Chang, P. C. and Baca, A. G. and Li, N. Y. and Sharps, P. R. and Hou, H. Q. and Laroche, J. R. and Ren, F.},
abstractNote = {We have demonstrated a functional P-n-p heterojunction bipolar transistor (HBT) using InGaAsN. The metalorganic-vapor-phase-epitaxy-grown Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} HBT takes advantage of the narrower band gap energy (E{sub g}=1.2 eV) of In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01}, which is lattice matched to GaAs. Compared with the Al{sub 0.3}Ga{sub 0.7}As/GaAs material system, the Al{sub 0.3}Ga{sub 0.7}As/In{sub 0.03}Ga{sub 0.97}As{sub 0.99}N{sub 0.01} material system has a larger conduction-band offset, while the valence-band offset remains comparable. This characteristic band alignment is very suitable for P-n-p HBT applications. The device's peak current gain is 23, and it has a turn-on voltage of 0.77 V, which is 0.25 V lower than in a comparable P-n-p Al{sub 0.3}Ga{sub 0.7}As/GaAs HBT. (c) 2000 American Institute of Physics.},
doi = {10.1063/1.126476},
journal = {Applied Physics Letters},
issn = {0003-6951},
number = 19,
volume = 76,
place = {United States},
year = {2000},
month = {5}
}